Measurements of spatial and temporal sheath evolution for spherical and cylindrical geometries in plasma source ion implantation

Shamim, M.; Scheuer, J.T.; Conrad, J.R.

doi:10.1063/1.348600

Cited by 106 publications

(34 citation statements)

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“…In this case, the electron density will vanish and the ion density will be reduced due to ion acceleration by the sheath' electric field. This suggests utilizing positive probe bias only, hence the probe becomes a sheath edge detector, showing electron current for thin sheath (probe in plasma) or negligible current (probe in sheath) [78]. The technique can be used to explore the time-dependent sheath behavior not only for planar geometry but also for three-dimensional objects [79].…”

Section: A Probe Measurements Of Plasma and Sheath Dynamicsmentioning

confidence: 99%

Plasma-based ion implantation and deposition: a review of physics, technology, and applications

Pelletier

Anders

2005

IEEE Trans. Plasma Sci.

169

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After pioneering work in the 1980s, plasma-based ion implantation (PBII) and plasma-based ion implantation and deposition (PBIID) can now be considered mature technologies for surface modification and thin film deposition. This review starts by looking at the historical development and recalling the basic ideas of PBII. Advantages and disadvantages are compared to conventional ion beam implantation and physical vapor deposition for PBII and PBIID, respectively, followed by a summary of the physics of sheath dynamics, plasma and pulse specifications, plasma diagnostics, and process modelling. The review moves on to technology considerations for plasma sources and process reactors. PBII surface modification and PBIID coatings are applied in a wide range of situations. They include the by-now traditional tribological applications of reducing wear and corrosion through the formation of hard, tough, smooth, low-friction and chemically inert phases and coatings, e.g. for engine components. PBII has become viable for the formation of shallow junctions and other applications in microelectronics. More recently, the rapidly growing field of biomaterial synthesis makes used 1 of PBII&D to produce surgical implants, bio-and blood-compatible surfaces and coatings, etc.With limitations, also non-conducting materials such as plastic sheets can be treated. The major interest in PBII processing originates from its flexibility in ion energy (from a few eV up to about 100 keV), and the capability to efficiently treat, or deposit on, large areas, and (within limits) to process non-flat, three-dimensional workpieces, including forming and modifying metastable phases and nanostructures.We use the acronym PBII&D when referring to both implantation and deposition, while PBIID implies that deposition is part of the process.2

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Section: A Probe Measurements Of Plasma and Sheath Dynamicsmentioning

confidence: 99%

Plasma-based ion implantation and deposition: a review of physics, technology, and applications

Pelletier

Anders

2005

IEEE Trans. Plasma Sci.

169

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“…Conrad, Lieberman, Scheuer dan Shamim [2][3][4], membuat model sheath dinamis tanpa tumbukan untuk plasma spesies tunggal. Saat tegangan negatif diberikan pada target yang tercelup dalam plasma akan terbentuk sheath.…”

Section: Pendahuluanunclassified

“…Sheath akan berubah tehadap waktu dan akan memenuhi hukum ChildLangmuir. Model sheath dinamis tanpa tumbukan ini telah dibuktikan dengan pengukuran oleh Shamim [4], dan dengan simulasi numerik oleh S.J. Hanh dan Lee.…”

Section: Pendahuluanunclassified

Studi Plasma Immersion Ion Implantation (PIII) dengan menggunakan Target Tak Planar

Cahyono

2010

JFA

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IntisariTelah dilakukan studi proses PIII dengan menggunakan model sheath dinamis tanpa tumbukan plasma multispesies bermuatan tunggal dan ganda dengan bentuk target silinder dan bola. Bentuk Pulsa tegangan yang digunakan adalah tegangan realistis. Dalam model ini ditentukan ekspansi sheath dinamis dan rapat arus ion implan total dengan menggunakan massa efektif yang merupakan fungsi dari komposisi, keadaan muatan dan massa ion dari masing-masing spesies yang berbeda.KATA KUNCI: Sheath dinamis, plasma multispesies, muatan ganda, tegangan realistis, target tak planar I. PENDAHULUANImplantasi ion sudah sering digunakan dalam teknik fabrikasi pembuatan semikonduktor dan proses pelapisan dalam bidang metalurgi dan optik. Plasma Immersion Ion Implantation (PIII) adalah salah satu teknik implantasi, dimana target tercelup dalam plasma seperti tampak pada Gambar 1 [1]. Model sheath dinamis mempunyai peran yang sangat penting dalam proses PIII. Model ini dapat digunakan untuk memprediksi parameter proses dan hasil implantasi dengan memasukkan doses implan dan profil impuritas. Konfigurasi sistem plasma yang optimal dapat ditentukan dari karakteristik ekspansi sheath.Conrad, Lieberman, Scheuer dan Shamim [2-4], membuat model sheath dinamis tanpa tumbukan untuk plasma spesies tunggal. Saat tegangan negatif diberikan pada target yang tercelup dalam plasma akan terbentuk sheath. Sheath akan berubah tehadap waktu dan akan memenuhi hukum ChildLangmuir. Model sheath dinamis tanpa tumbukan ini telah dibuktikan dengan pengukuran oleh Shamim [4], dan dengan simulasi numerik oleh S.J. Hanh dan Lee.Model sheath plasma spesies tunggal telah banyak digunakan walaupun dalam kenyataannya plasma yang digunakan dalam proses PIII adalah plasma multispesies. Thomas menggunakan model fluida untuk menghitung sheath dinamis dari plasma dua spesies (N + dan N + 2 ) untuk implantasi ion. Qin, dkk [5] dan Cahyono [6] mengembangkan model sheath dinamis tanpa tumbukan plasma multispesies bermuatan tunggal dengan menggunakan contoh plasma Ar-He dan BF3 yang masing-masing spesiesnya dianggap bermuatan tunggal untuk studi proses PIII.Model sheath dinamis tanpa tumbukan plasma multispesies bermuatan ganda dikembangkan oleh Qin, dkk [7], dimana keadaan muatan dari ion-ion spesiesnya diperhatikan. Bentuk Pulsa tegangan yang digunakan adalah tegangan ko- * E-MAIL: yoyok@physics.its.ac.id

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“…Some authors calculated the sheaths around a substrate with complex shapes [29][30][31][32]. At the same time, experimental results on sheath evolution were also reported [33][34][35][36]. These contributions provide a physical framework for process applications.…”

Section: Introductionmentioning

confidence: 99%

Measurements of the asymmetric dynamic sheath around a pulse biased sphere immersed in flowing metal plasma

Wu¹,

Anders²

2008

Plasma Sources Sci. Technol.

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Abstract.A long-probe technique was utilized to record the expansion and retreat of the dynamic sheath around a spherical substrate immersed in pulsed cathode arc metal plasma. Positively biased, long cylindrical probes were placed on the side and downstream of a negatively pulsed biased stainless steel sphere of 1" (25.4 mm) diameter. The amplitude and width of the negative high voltage pulses (HVP) were 2 kV, 5 kV, 10 kV, and 2 μs, 4 μs, 10 μs, respectively. The variation of the probe (electron) current during the HVP is a direct measure for the sheath expansion and retreat. Maximum sheath sizes were determined for the different parameters of the HVP. The expected rarefaction zone behind the biased sphere (wake) due to the fast plasma flow was clearly established and quantified.Key words: plasma probe, sheath measurement, cathodic arc plasma, wake effect revised; submitted to Plasma Sources Science & Technology, 2008 1 IntroductionMetal (and carbon) plasmas have their special place in many industrial processes such as the deposition of ultrathin layers in the computer and data storage industry [1][2][3], the coating and filling of sub-micron trenches [4][5][6], and the synthesis of nanocomposite materials [7][8][9][10]. The cathodic vacuum arc discharge is a convenient and well-known method to produce flowing metal plasma. Such plasma has the advantage that it is practically fully ionized and therefore biasing of a substrate is very efficient. This has been recognized early on [11,12] and it is used in a practically all of the above-cited applications. The perfection of interface engineering with pulsed bias led to the development of Metal Plasma Immersion Ion Implantation and Deposition (MePIIID) [11][12][13][14][15], a combined ion implantation and deposition process.It is often desirable to process a substrate from all sides in a more or less uniform manner, and this requires the presence of uniform and isotropic plasma around the substrate. In the plasma immersion process using gaseous plasma, also known as plasma source ion implantation (PSII) [16][17][18][19], emphasis is put on uniform plasma generation. To check for uniform processing one could measure the sheath thickness and evolution on the different sides of the substrate. Various theoretical models and simulation [20][21][22][23][24][25][26][27][28] were developed to explain the sheath behavior. Some authors calculated the sheaths around a substrate with complex shapes [29][30][31][32]. At the same time, experimental results on sheath evolution were also reported [33][34][35][36]. These contributions provide a physical framework for process applications. However, the models generally do not account for supersonic ion velocities and the condensation (sticking and/or subplantation [37]) of plasma ions on surfaces, i.e. effects that are typical for the flowing cathodic arc metal plasmas [38,39]. Clearly, the plasma densities upstream and downstream of the substrate must be very different, and one can expect large variations in the sheath properties [...

show abstract

Measurements of spatial and temporal sheath evolution for spherical and cylindrical geometries in plasma source ion implantation

Cited by 106 publications

References 12 publications

Plasma-based ion implantation and deposition: a review of physics, technology, and applications

Plasma-based ion implantation and deposition: a review of physics, technology, and applications

Studi Plasma Immersion Ion Implantation (PIII) dengan menggunakan Target Tak Planar

Measurements of the asymmetric dynamic sheath around a pulse biased sphere immersed in flowing metal plasma

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