Measurements of multiple scattering of high energy protons in bent silicon crystals

Scandale, W.; Arduini, G.; Butcher, Mark; Cerutti, F.; Garattini, M.; Gilardoni, S.; Lechner, Anton; Losito, R.; Masi, A.; Mirarchi, Daniele; Redaelli, Stefano; Rossi, Roberto; Schoofs, P.; Smirnov, G.I.; Valentino, Gianluca; Bretón, D.; Burmistrov, L.; Chaumat, V.; Dubos, S.; Maalmi, Jihane; Puill, V.; Stocchi, A.; Bagli, E.; Bandiera, L.; Germogli, G.; Guidi, V.; Mazzolari, A.; Dabagov, Sultan B.; Murtas, F.; Addesa, F. M.; Cavoto, G.; Iacoangeli, F.; Galluccio, F.; Afonin, A. G.; Chesnokov, Yu. A.; Durum, A.; Maisheev, V. A.; Sandomirskiy, Yu.E.; Yanovich, A.; Kovalenko, A. D.; Taratin, A.M.; Denisov, A.S.; Gavrikov, Yu.A.; Ivanov, Yuri M.; Lapina, L.P.; Malyarenko, L.G.; Skorobogatov, V. V.; James, T.; Hall, G.; Pesaresi, M.; Raymond, M.

doi:10.1016/j.nimb.2017.02.060

Cited by 8 publications

(8 citation statements)

References 12 publications

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“…They showed that there is additional scattering of the protons on material in the beam (strip detectors and other matter). Background measurements in the experiment performed without a crystal show that the contribution of this background process can be described by a Gaussian with rms σ bg = 5 µrad for a 400 GeV/c proton [18] and σ bg = 11.27 µrad [6] for 180 GeV/c secondary beams. As explained in [5,6,18] the measured σ m and corrected σ si rms of angles of multiple scattering are determined by the relation:…”

Section: About Experiments With Focusing Crystalsmentioning

confidence: 98%

“…The variable x was from -1 to 1 mm for crystals 1 and 2, and from -2 to 2 mm for crystal 4 (x 0 ≈ 0). It should be noted that our collaboration (UA9) has carried out measurements of multiple scattering of 400 GeV/c protons [18] in single silicon crystals with orientations far from axial or planar channeling. That experiment was performed in parallel and at the same time and on the same installation as the experiments described here with focusing crystals.…”

Section: About Experiments With Focusing Crystalsmentioning

confidence: 99%

“…That experiment was performed in parallel and at the same time and on the same installation as the experiments described here with focusing crystals. In [18] the background conditions were investigated. They showed that there is additional scattering of the protons on material in the beam (strip detectors and other matter).…”

Section: About Experiments With Focusing Crystalsmentioning

confidence: 99%

“…Note that the first measurements of multiple scattering of 400 GeV/c protons were carried out by our collaboration in 2016 [18] for three silicon crystals 0.97, 1.94, and 4.02 mm thick. In the experiment, the crystals were oriented away from strong axes and planes.…”

Section: Multiple Scattering In the Channeling Regionmentioning

confidence: 99%

“…In the experiment, the crystals were oriented away from strong axes and planes. We combined the measurement data [18] with the data obtained in the experiment [5,7] and obtained a description for the process from fractions of a mm to 50 mm of silicon thickness. For the universal Eq.…”

Section: Multiple Scattering In the Channeling Regionmentioning

confidence: 99%

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Multiple scattering of channeled and non-channeled positively charged particles in bent monocrystalline silicon

Scandale,

Arduini,

Cerutti

et al. 2022

Preprint

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We present the results of an experimental study of multiple scattering of positively charged highenergy particles in bent samples of monocrystalline silicon. This work confirms the recently discovered effect of a strong reduction in the rms multiple scattering angle of particles channeled in the silicon (111) plane. The effect is observed in the plane orthogonal to the bending plane. We show in detail the influence of angular constraints on the magnitude of the effect. Comparison of the multiple scattering process at different energies indicates a violation of the law of inverse proportionality of the rms angle of channeled particles with energy. By increasing the statistics, we have improved the results of multiple scattering measurements for particles moving, but not channeled, in silicon crystals.

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