2017 IEEE 12th International Conference on Nano/Micro Engineered and Molecular Systems (NEMS) 2017
DOI: 10.1109/nems.2017.8017139
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Measurement study of residual stress on tungsten-rhenium thin film thermocouples by nanoindentation technology

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Cited by 4 publications
(3 citation statements)
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“…The SiC substrate had a diameter of 6 in and a thickness of 0.4 mm, which was cleaned ultrasonically in the bath of pure alcohol and then acetone, respectively. The relevant parameters [ 16 , 17 ] are shown in Table 1 .…”
Section: Methodsmentioning
confidence: 99%
“…The SiC substrate had a diameter of 6 in and a thickness of 0.4 mm, which was cleaned ultrasonically in the bath of pure alcohol and then acetone, respectively. The relevant parameters [ 16 , 17 ] are shown in Table 1 .…”
Section: Methodsmentioning
confidence: 99%
“…A nano-indentation apparatus (G200, Agilent Technologies Inc. (China), Beijing, China) with a three sided pyramid Cube-Corner indenter (54.7356°) is used to test the hardness and elastic modulus of films with the selected loading process [10]. …”
Section: Simulation and Optimizationmentioning
confidence: 99%
“…To compare with the simulation results of FEA, nano-indentation experiments are done to measure and calculate the film stress, shown in Figure 9 . A nano-indentation apparatus (G200, Agilent Technologies Inc. (China), Beijing, China) with a three sided pyramid Cube-Corner indenter (54.7356°) is used to test the hardness and elastic modulus of films with the selected loading process [ 10 ].…”
Section: Simulation and Optimizationmentioning
confidence: 99%