Measurement of Vacuum Ultraviolet Radiation with Diamond Photo Sensors

Uchida, Kôji; Ishihara, Hideaki; Nippashi, Kenji; Matsuoka, Mikihiko; Hayashi, Kazushi

doi:10.2150/jlve.28.97

Cited by 14 publications

(11 citation statements)

References 7 publications

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“…Therefore, the diamond UV photodetector, different from existing UV detectors, is capable of directly detecting UV without the aid of an optical filter (less durable UV radiation) that blocks light (wavelength: 227 nm or longer) other than UV. (2)(3)(4) The diamond UV photodetectors used HOD films made by Kobe Steel, Ltd. (5)(6)(7) The HOD films were produced on silicon (001) substrates by microwave plasma chemical vapor deposition (CVD) with bias-enhanced nucleation (BEN) treatment. The HOD films consisted of azimuthally oriented (001) facets with typical grains from 1 to 3 µm sizes and a thickness of 10 µm.…”

Section: Methodsmentioning

confidence: 99%

Characterization of Photoconductive Diamond Detectors - Candidate Vacuum Ultraviolet Radiation and Extreme Ultraviolet Radiation Light Source Detectors for Lithography -

2010

Sensors and Materials

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Key words: photoconductive diamond detector, vacuum ultraviolet (VUV) radiation, extreme ultraviolet (EUV) radiation, VUV/EUV radiation light source detectors for lithographyThe characteristics of an ultraviolet (UV) and vacuum ultraviolet (VUV) radiation photodetector with a photoconductive highly oriented diamond (HOD) film were evaluated using continuous light sources (a low-pressure mercury lamp and a xenon excimer lamp) that mainly emit light in the UV range. It was confirmed that the change in the spectral responsivity of the photodetector is extremely limited upon continuous UV radiation. In this report, the results of the evaluation of the characteristics of the UV photodetector with a photoconductive diamond film (hereafter, diamond UV photodetector) using continuous light sources are reported. We also found that the diamond UV photodetector has characteristics enabling its use as a photodetector for ArF excimer lasers and extreme ultraviolet (EUV) light sources, as a result of the evaluation using a light source employed in lithography. The results are also described. The evaluation of the diamond UV photodetector using an ArF excimer laser revealed that it can detect a laser with a pulse width of 5 ns. Also, good linearity between the pulse energy and the output was observed for pulse energies of 1-100 µJ/cm 2 . By the measurement of the spectral responsivity to synchrotron radiation, the diamond UV photodetector was found to have high spectral responsivity in the wavelength range of 10-33 nm. According to the results given above, the diamond UV photodetector has sufficient time responsiveness (follow-up performance) to enable the measurement of ArF excimer lasers and sufficient spectral responsivity to detect light in the EUV region, suggesting its use as a photodetector of light sources used in lithography.

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Section: Methodsmentioning

confidence: 99%

Characterization of Photoconductive Diamond Detectors - Candidate Vacuum Ultraviolet Radiation and Extreme Ultraviolet Radiation Light Source Detectors for Lithography -

2010

Sensors and Materials

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“…The photocurrent of the device at 30.4 nm and 58.4 nm proves the photoelectric detection ability of as-fabricated detectors in the extreme ultraviolet spectral region. Moreover, the diamond thin-film detector exhibited long-term stability over 98 h under VUV radiation of 10 mW/cm 2 [67]. Excellent long-term stability is one of the important factors for transfer standard detectors in the VUV band [68].…”

Section: Film-structurementioning

confidence: 99%

Vacuum-ultraviolet photodetectors

2020

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High-performance vacuum-ultraviolet (VUV) photodetectors are of great significance to space science, radiation monitoring, electronic industry and basic science. Due to the absolute advantages in VUV selective response and radiation resistance, ultra-wide bandgap semiconductors such as diamond, BN and AlN attract wide interest from researchers, and thus the researches on VUV photodetectors based on these emerging semiconductor materials have made considerable progress in the past 20 years. This paper takes ultra-wide bandgap semiconductor filterless VUV photodetectors with different working mechanisms as the object and gives a systematic review in the aspects of figures of merit, performance evaluation methods and research progress. These miniaturized and easily-integrated photodetectors with low power consumption are expected to achieve efficient VUV dynamic imaging and single photon detection in the future.

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“…[13,14] Consequently, wide bandgap (WBG) semiconductors, such as aluminum nitride (AlN), boron nitride (BN), zinc oxide (ZnO), magnesium oxide (MgO), and titanium dioxide (TiO 2 ), as well as diamond have attracted extensive research efforts for the development of VUV photodetectors. [15][16][17][18][19][20][21][22][23][24][25][26][27][28][29][30][31] Despite the improved radiation hardness of WBG semiconductor-based detectors compared to silicon-based detectors, their bandgaps still lie in the UV region, and some degradation is therefore expected, especially during long-term operation. In contrast, wide bandgap fluoride-based detectors have recently emerged.…”

Section: Introductionmentioning

confidence: 99%

Influence of Annealing on Thin Film/Substrate Interface and Vacuum Ultraviolet Photoconductivity of Neodymium Fluoride Thin Films

Kato,

Cadatal‐Raduban,

Horiuchi

et al. 2023

Adv Materials Inter

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High photon energy vacuum ultraviolet radiation (VUV, 100−200 nm wavelength) is challenging to detect. It easily degrades conventional silicon and semiconductor photodetectors. Fluoride photodetectors can be the answer, but the correlation between fabrication parameters and photodetector performance is not known. Here, the effect of annealing is investigated on the characteristics of neodymium trifluoride thin film/quartz substrate interface and NdF3 photoconductivity within the VUV. Thin films are deposited on unheated and heated (600 °C) substrates with post‐deposition annealing. Dark current of films on unheated substrates decreases by as much as 1/10 as resistance increases from 1 −12 TΩ after annealing. Dark current of films on heated substrates increases even after annealing, resulting in similar photo and dark currents of ≈303.7 nA and poor detectors. Fluorine diffuses from the film to the substrate during deposition, exacerbated by substrate heating but not by annealing. Fluorine diffusion degrades crystallinity near the interface, increasing the dark current. Fluorine diffusion is absent when MgF2 is used as the heated substrate. Unannealed NdF3/MgF2 detector on 600 °C‐heated substrate and 600 °C‐annealed NdF3/SiO2 detector on unheated substrate exhibit similar resistances of ≈14 TΩ. Considering the film/substrate interface and annealing is crucial when developing VUV photodetectors.

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Measurement of Vacuum Ultraviolet Radiation with Diamond Photo Sensors

Cited by 14 publications

References 7 publications

Characterization of Photoconductive Diamond Detectors - Candidate Vacuum Ultraviolet Radiation and Extreme Ultraviolet Radiation Light Source Detectors for Lithography -

Characterization of Photoconductive Diamond Detectors - Candidate Vacuum Ultraviolet Radiation and Extreme Ultraviolet Radiation Light Source Detectors for Lithography -

Vacuum-ultraviolet photodetectors

Influence of Annealing on Thin Film/Substrate Interface and Vacuum Ultraviolet Photoconductivity of Neodymium Fluoride Thin Films

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