Abstract:In
this work, the micro-photoluminescence (PL) technique is applied
to study the thermal transport properties of single-layer transition-metal
dichalcogenide materials WS2 grown by chemical vapor deposition.
By comparing the temperature-dependent Raman spectrum with the PL
spectrum, we prove that the PL implementation can provide both higher
temperature sensitivity (4–5 times) and stronger signal response
(∼100 times), which may largely reduce the uncertainties and
time consumption for thermal conductivity mea… Show more
“…Raman spectroscopy is a very sensitive technique that can detect phonon frequency vibrations, and hence thermal conductivity values can be extracted from the Raman spectral data. 41,42 This method has been widely applied for various 2D materials such as graphene, phosphorene, MoS 2 , MoTe 2 , WS 2 , and other thin layers. 41−45 In this study, single crystals of MoSe 2(1−x) Te 2x with x values of 0 to 1 are grown and characterized by various techniques.…”
Section: Introductionmentioning
confidence: 99%
“…In addition, in order to minimize the thermal conductivity, it is essential to understand the phonon dynamics, particularly the electron–phonon and phonon–phonon interactions. Raman spectroscopy is a very sensitive technique that can detect phonon frequency vibrations, and hence thermal conductivity values can be extracted from the Raman spectral data. , This method has been widely applied for various 2D materials such as graphene, phosphorene, MoS 2 , MoTe 2 , WS 2 , and other thin layers. − …”
Transition metal dichalcogenide alloys have received enormous attention since the alloying of different elements allows optimization of thermal and electrical transport properties. In the present study, the thermal transport properties of 2H phase of a single-to few-layer MoSe 2(1−x) Te 2x alloys (x = 0.0, 0.25, 0.5, 0.75, and 1) are investigated using optothermal Raman spectroscopy. The synthesis of 2H MoSe 2(1−x) Te 2x crystals is achieved using a chemical vapor transport technique, and the resulting highly oriented crystals are characterized using various physicochemical techniques. Subsequently, the temperature-and powerdependent Raman scattering behavior of alloys in monolayer to few layers is investigated. It is found that with increasing temperature and power, A 1g and E 2g modes of all compositions show a red shift. The first-order temperature and power coefficients are determined and found to be composition-tunable. Subsequently, the thermal conductivity values for monolayer alloys are estimated and found to be lower for alloys than those of the pristine counterparts due to enhanced phonon scattering in mixed alloys. The lowest thermal conductivity of 4.23 ± 0.69 W m −1 •K −1 is obtained for the composition MoSe 1.0 Te 1.0 . Further, the electrical transport behavior of the alloys as a function of composition and thickness reveals perfect ambipolarity for an equal fraction of Se and Te showing high electron and hole mobilities with an I on /I off ratio of ∼10 6 . The excellent electrical properties and low thermal conductivities observed for the MoSe 1.0 Te 1.0 alloy may give rise to a good thermoelectric material.
“…Raman spectroscopy is a very sensitive technique that can detect phonon frequency vibrations, and hence thermal conductivity values can be extracted from the Raman spectral data. 41,42 This method has been widely applied for various 2D materials such as graphene, phosphorene, MoS 2 , MoTe 2 , WS 2 , and other thin layers. 41−45 In this study, single crystals of MoSe 2(1−x) Te 2x with x values of 0 to 1 are grown and characterized by various techniques.…”
Section: Introductionmentioning
confidence: 99%
“…In addition, in order to minimize the thermal conductivity, it is essential to understand the phonon dynamics, particularly the electron–phonon and phonon–phonon interactions. Raman spectroscopy is a very sensitive technique that can detect phonon frequency vibrations, and hence thermal conductivity values can be extracted from the Raman spectral data. , This method has been widely applied for various 2D materials such as graphene, phosphorene, MoS 2 , MoTe 2 , WS 2 , and other thin layers. − …”
Transition metal dichalcogenide alloys have received enormous attention since the alloying of different elements allows optimization of thermal and electrical transport properties. In the present study, the thermal transport properties of 2H phase of a single-to few-layer MoSe 2(1−x) Te 2x alloys (x = 0.0, 0.25, 0.5, 0.75, and 1) are investigated using optothermal Raman spectroscopy. The synthesis of 2H MoSe 2(1−x) Te 2x crystals is achieved using a chemical vapor transport technique, and the resulting highly oriented crystals are characterized using various physicochemical techniques. Subsequently, the temperature-and powerdependent Raman scattering behavior of alloys in monolayer to few layers is investigated. It is found that with increasing temperature and power, A 1g and E 2g modes of all compositions show a red shift. The first-order temperature and power coefficients are determined and found to be composition-tunable. Subsequently, the thermal conductivity values for monolayer alloys are estimated and found to be lower for alloys than those of the pristine counterparts due to enhanced phonon scattering in mixed alloys. The lowest thermal conductivity of 4.23 ± 0.69 W m −1 •K −1 is obtained for the composition MoSe 1.0 Te 1.0 . Further, the electrical transport behavior of the alloys as a function of composition and thickness reveals perfect ambipolarity for an equal fraction of Se and Te showing high electron and hole mobilities with an I on /I off ratio of ∼10 6 . The excellent electrical properties and low thermal conductivities observed for the MoSe 1.0 Te 1.0 alloy may give rise to a good thermoelectric material.
“…Developing advanced thermal management materials (TMMs) is essential to alleviate the accumulation of heat in modern devices with high power and energy density, such as flexible power electronics, computer chips, electric vehicles, and 5G communication equipment. − Poly(dimethylsiloxane) (PDMS) is a promising candidate for preparing TMMs by virtue of its lightweight, easy processing, as well as exceptional electric and mechanical characteristics. , Particularly, PDMS possess remarkably flexible and airtight properties, maintaining good intrinsic performance when subjected to stresses such as stretching and bending, which enable them to adhere perfectly to the device and thus accelerate heat dissipation. , However, owing to the low inherent thermal conductivity (λ, ∼0.2 W/m·K), PDMS shows insufficient heat dissipation capacity, which restricts its application in thermal management . Considerable effort has been dedicated to improving the λ of PDMS-based TMMs by incorporating highly thermally conductive fillers, such as ceramics (boron nitride, alumina, silicon carbide, etc.…”
Section: Introductionmentioning
confidence: 99%
“…5,6 Particularly, PDMS possess remarkably flexible and airtight properties, maintaining good intrinsic performance when subjected to stresses such as stretching and bending, which enable them to adhere perfectly to the device and thus accelerate heat dissipation. 7,8 However, owing to the low inherent thermal conductivity (λ, ∼0.2 W/m• K), PDMS shows insufficient heat dissipation capacity, which restricts its application in thermal management. 9 Considerable effort has been dedicated to improving the λ of PDMS-based TMMs by incorporating highly thermally conductive fillers, such as ceramics (boron nitride, alumina, silicon carbide, etc.…”
Thermally
conductive dielectric materials hold the potential to
revolutionize thermal management. It is highly desirable yet challenging
to develop materials with high thermal conductivity (λ), low
dielectric loss, and superb flexibility due to the different or even
mutually exclusive physical connotations of these properties. This
study presents a novel composite film composed of poly(dimethylsiloxane)
(PDMS) and silver nanoparticle (AgNP)-decorated with boron nitride
nanosheets (BNNS@Ag). In the composite, the uniform and well-dispersed
two-dimensional (2D) BNNS are connected by in situ incorporated zero-dimensional
(0D) AgNPs, establishing an efficient phonon transport network. The
resulting BNNS@Ag/PDMS composite boasts an impressive λ of 3.77
W/m·K, which is approximately 13.6 and 36.6% higher than those
of the BNNS/PDMS and h-BN/PDMS composite films, respectively, and
nearly four times that of the pure PDMS films. Additionally, the wide
band gap of BNNS effectively suppresses electron transport, endowing
BNNS@Ag/PDMS with a low dielectric constant (∼4.01, at 103 Hz) and low loss (∼0.003), as well as a high dielectric
breakdown strength (124.68 kV/mm). The findings of this study provide
a roadmap for designing high-performance PDMS composites to meet the
thermal management needs of advanced electronic devices.
“…As a bridge two-dimensional (2D) material between graphene (zero bandgap) and transition metal dichalcogenides (TMDCs) , that exhibit visible luminescence, black phosphorus (bP) with a layered buckled structure has a tunable direct bandgap ranging from ∼2.0 eV (single layer) to ∼0.3 eV (bulk) . This property makes bP have a broadband optical response from the visible to mid-infrared region.…”
Strain engineering is a powerful tool that can modulate semiconductor device performance. Here, we demonstrate that the bandgap of thin film (∼40 nm) black phosphorus (bP) can be continuously tuned from 2.9 to 3.9 μm by applying an in-plane uniaxial strain, as evidenced by mid-infrared photoluminescence (PL) spectroscopy. The deduced bandgap strain coefficients are ∼103 meV % −1 , which coincide with those obtained in few-layer bP. On the basis of first-principles calculations, the origin of the uniaxial tensile strain-induced PL enhancement is suggested to be due to the increase in both the effective mass ratio (m e */m h *) and the bandgap, leading to the increment of the radiative efficiency. Moreover, the midinfrared PL emission remains perfectly linear-polarized along the armchair direction regardless of tensile or compressive strain. The highly tunable bandgap of bP in the mid-infrared regime opens up opportunities for the realization of mid-infrared light-emitting diodes and lasers using layered materials.
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