Measurement of the Steady-State Minority Carrier Diffusion Length in a HgCdTe Photodiode

Abstract

The surface effects on the spontaneous polarisation in ferroelectric thin films were discussed based on the Iaing model in a transverse field. Both the modifications of the transverse field and the strength of coupling in the surface layer were taken into consideration. At the temperature much lower than the Curie point, the behaviour of the spontaneous polarisation deviates from the phenomenological description. The surface effects might lead to the spontaneous polarization and tbe Curie temperature changing in different direction. The theory gives a reasonable description of the experimental temperature dependence of the spontaneous polarisation of triglycine sulfate thin films in the Literature.

Determination of the Bulk and Local Diffusion-Length Values of Charge Carriers in MCT Films and in the Absorber Layers of MCT-Based Photovoltaic IR FPA Detectors

“…Approximation of the curve l d eff (I 0 ) to I 0 =0 according to asymptotic (4) yields for l d a value of 19.5 μm in the absorber material of the D-1 detector and a value of 24 μm in the absorber material of the D-2 detector. Those values are in good agreement with relevant data that were previously reported in the literature (see, e.g [5,13,25],. where the values of 19 μm[25], 20-23 μm[13], and 25-35 μm[5] were reported for the carrier diffusion length l d in p-type MCT at 78 K), and also with the diffusion-length values calculated from the lifetime and mobility data for p-type MCT of similar stoichiometry (see, e.g [26],.…”

“…Those values are in good agreement with relevant data that were previously reported in the literature (see, e.g [5,13,25],. where the values of 19 μm[25], 20-23 μm[13], and 25-35 μm[5] were reported for the carrier diffusion length l d in p-type MCT at 78 K), and also with the diffusion-length values calculated from the lifetime and mobility data for p-type MCT of similar stoichiometry (see, e.g [26],. where the lifetime and mobility values τ=10-15 ns and µ e =6.8×10 4 cm 2 /V×s, translating into l d =21.4-26.2 μm, were obtained for a Cd x Hg 1-x Te material with x=0.20-0.23).…”