Measurement of the state of stress in silicon with micro-Raman spectroscopy

Abstract

Micro-Raman spectroscopy has been widely used to measure local stresses in silicon and other cubic materials. However, a single (scalar) line position measurement cannot determine the complete stress state unless it has a very simple form such as uniaxial. Previously published micro-Raman strategies designed to determine additional elements of the stress tensor take advantage of the polarization and intensity of the Raman-scattered light, but these strategies have not been validated experimentally. In this work, we test one such stategy [S. Narayanan, S. Kalidindi, and L. Schadler, J. Appl. Phys. 82, 2595 (1997)] for rectangular (110)and (111)-orientated silicon wafers. The wafers are subjected to a bending stress using a custom-designed apparatus, and the state of (plane) stress is modeled with ABAQUS. The Raman shifts are calculated using previously published values for silicon phonon deformation potentials. The experimentally measured values for xx , yy , and xy at the silicon surface are in good agreement with those calculated with the ABAQUS model.

Room Temperature Photoluminescence and Raman Characterization of Interface Characteristics of SiN/SiO2/Si Prepared under Various Deposition Techniques and Conditions

“…[16][17][18][19] It is important to directly measure Si lattice stress instead of estimating film stress from the curvature of blanket Si wafers before * Electrochemical Society Active Member.…”

“…[11][12][13][14][15] Multiwavelength Raman spectroscopy has been widely used in lattice stress characterization of various types (blanket, patterned) of Si wafers. [16][17][18][19] It is important to directly measure Si lattice stress instead of estimating film stress from the curvature of blanket Si wafers before * Electrochemical Society Active Member.…”

Locally enhanced Voronoi cell finite element model (LE‐VCFEM) for simulating evolving fracture in ductile microstructures containing inclusions

“…As shown in Figure 5(b), the sample is loaded in the y-direction by an applied strain. Loading direction stresses on the surface of the water are experimentally evaluated by micro-Raman spectroscopy executed by Harris et al [60,61]. Two eutectic Si particles are singled out for interrogation.…”

μ-Raman spectroscopy characterization of LiNbO3 femtosecond laser written waveguides

“…[29][30][31] This method involves the linking of three elements by the linear deformation potential theory. These elements are:…”

“…The first relates to materials used in microelectronics and micro electro-mechanical (MEMS) manufacturing, [21][22][23][24][25][26][27][28][29][30][31][32] and the other relates to photonic materials. [33][34][35][36] These photonic materials are used as bulk material for the generation of optical and electro-optical circuits.…”