Measurement of the Finish of Diamond-Turned Metal Surfaces By Differential Light Scattering

Church, E. L.; Jenkinson, H. A.; Zavada, J. M.

doi:10.1117/12.7972054

Cited by 116 publications

(25 citation statements)

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“…Let the surface profile be Z(x) = a Sin(2nx /d) , (1) where a is the vertical amplitude of the grating structure and d is its transverse spatial wavelength. Light incident on such a surface will scatter in the form of a pair of first -order diffraction lines with positions determined by the familiar grating equation Sines = Sinci ± Pd , (2) where X is the radiation wavelength.…”

Section: Introductionmentioning

confidence: 99%

Relationship between Surface Scattering and Microtopographic Features

1979

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In the smooth-surface limit, the angular distribution of the light scattered from a surface maps the power spectral density of its residual surface roughness. This result is essentially independent of the scattering theory used and the statistical properties of the surface roughness. The power spectral densities of engineering surfaces are generally broad and increase with increasing spatial wavelength. As a result, practical surface finish parameters are not intrinsic properties of the surface, but depend, with varying degrees of sensitivity, on the bandwidth limits inherent in their measurement or dictated by their application. These issues are discussed with reference to two classes of finish parameters: those related to the central moments of the scattering spectrum, and those related to the coefficients in the expansion of the shape of the spectrum in inverse powers of the scattering angle. The significance of "1/02" scattering in this context is emphasized. A shot model of surface roughness is then introduced to gain further insight into the relationship between scattering and surface features. In this model inverse power terms are related to "edge" scattering effects from critical points in various types of elemental microdefects. The relationship between this view and electronic noise is pointed out; in particular, the correspondence between "1/62" scattering and "1 /f" or flicker -noise phenomena.

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Section: Introductionmentioning

confidence: 99%

Relationship between Surface Scattering and Microtopographic Features

1979

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“…The results were interpreted in terms of the first-order scattering theory in which the surface irregularities are considered as random gratings diffracting the incident beam. These approaches used in above mentioned papers in interpreting the experimental results are similar to the one successfully taken to interprete the light and/or VUV scattering from optical surfaces (Elson & Bennett, 1979;Church, Jenkinson & Zavada, 1977, 1979Rehn, Jones, Elson & Bennett, 1980;Rehn, 1981;Elson, Rehn, Bennett & Jones, 1981). Church (1979) compared quantitatively the experimental results obtained by de Korte & Laine (1979) with the predicted curve using a surface-tension model of the microirregularities.…”

Section: Introductionmentioning

confidence: 84%

“…A number of techniques can be used for assessing the surface quality of the mirror; some typical examples of these techniques are stylus measurement, various kinds of interferometric methods (for example Bennett, 1976), total integrated light scattering (Bennett & Porteus, 1961), angle-resolved light scattering (for example Church, Jenkinson & Zavada, 1977, 1979Elson & Bennett, 1979), X-ray total reflection (Parratt, 1954), X-ray topographic method (Lindsley, 1974), and angleresolved X-ray scattering with which the present paper is concerned. Among these techniques the measurement of angle-resolved X-ray scattering is the most straightforward as far as the X-ray scattering property is concerned.…”

Section: Introductionmentioning

confidence: 99%

High-resolution measurements of angle-resolved X-ray scattering from optically flat mirrors

Matsushita¹,

Ishikawa²,

Köhra³

1984

J Appl Cryst

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With a compact arrangement using single-crystal collimator and analyzer (silicon 220 reflection) of channel-cut type, angle-resolved scattering (ARS) curves of X-rays (Cu K~I) for optically flat mirrors have been measured at various glancing angles, 09, of X-rays to the mirror surface with an angular resolution of 4". Weak scattered intensity (10-3-10 -s of the specularly reflected beam) is observed over an angular range of a few hundred arc s below and above the direction of specular reflection. When ~o is close to the critical angle for total reflection, the scattered intensity at the low-angle tail of ARS curves is higher than that at the high-angle tail. This asymmetric tail profile of ARS curves is explained by simply superposing intensities of specularly reflected beams from surface elements inclined to each other.

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“…1(b). The ͗110͘ cross pattern in the power spectral density (PSD) means that the scattered light intensity, which is proportional to the PSD of the surface height [11], should be concentrated in two orthogonal directions parallel to the ͗110͘ crystal axes. There is an angular spread in the cross pattern due to distortion in the AFM scan; however, the corresponding scattering lines are one dimensional (1D), with a width determined by the divergence of the laser beam.…”

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confidence: 99%

“…3. The PSD as a function of q is proportional to the scattered light intensity as a function of 2p͓sin u i 2 sin u s ͔͞l, where u i and u s are the incident and scattering angles, respectively [11]. Here, a 632 nm HeNe laser was incident on the sample at 65 ± from the normal.…”

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Surface Morphology Dynamics in Strained Epitaxial InGaAs

et al. 1997

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Elastic light scattering has been used to measure the time evolution of the power spectrum of the surface morphology of strained InGaAs layers during growth. From a combination of fixed scattering angle measurements during growth and variable scattering angle measurements after growth, we are able to determine both the time and spatial frequency dependence of the power spectral density during relaxation of the strained films via misfit dislocations. The data are fit with an EdwardsWilkinson model, for which the surface morphology is driven by inhomogeneous surface strains.[S0031-9007(97)03924-0] PACS numbers: 68.55.Jk, 61.16.Ch, 78.35. + c, 81.15.Hi Computer simulations and analytical theory have contributed greatly to our understanding of the dynamical behavior of surface morphology during thin film growth. Experimental studies have been less definitive however. For example, the general form of the equations that describe surface morphology in the continuum limit is known from theory [1], yet experimental tests of these theories have tended to be limited to studies of the scaling relations for the interface width. The systems for which thin film growth is best understood are single crystal semiconductor films of Si, SiGe, and III-V semiconductors [2][3][4][5]. In this paper we use laser light scattering (LLS) to explore the dynamics of surface morphology in one of these systems, namely, strained InGaAs on GaAs, and compare the results with the predictions of the continuum growth models.Electron diffraction techniques, which are the most commonly used surface structure probes, are not sensitive to the large scale structures of interest in studies of morphology in the continuum limit, due to the short coherence length of the electrons. Laser light scattering does not have this problem. For the mirrorlike substrates used in crystal growth experiments, LLS can detect atomic-scale changes in the surface height on lateral length scales comparable to an optical wavelength [6]. In addition to being highly sensitive, LLS is well suited to in situ measurements during growth [6,7]. A potential problem is that light scattering is sensitive to particles and point defects on the surface, which are difficult to distinguish from the scattering due to the surface morphology. However, by comparing light scattering results with atomic force microscope (AFM) measurements, we have found that LLS provides reliable quantitative morphology information [8]. In addition, the scattering considered in this paper is highly anisotropic, indicating that it is dominated by the crosshatched morphology of the surface and not by the isotropic scattering expected from particles.Light scattering measurements were carried out in a VG V80H molecular beam epitaxy (MBE) chamber [6], with a 27 mW, 488 nm Ar 1 laser incident normal to the substrate. The diffusely scattered light was detected simultaneously at 25 ± and 55 ± from the surface normal. The sample orientation was fixed during growth such that the plane of scattering defined by the detector ...

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Measurement of the Finish of Diamond-Turned Metal Surfaces By Differential Light Scattering

Cited by 116 publications

References 1 publication

Relationship between Surface Scattering and Microtopographic Features

Relationship between Surface Scattering and Microtopographic Features

High-resolution measurements of angle-resolved X-ray scattering from optically flat mirrors

Surface Morphology Dynamics in Strained Epitaxial InGaAs

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