Measurement of the band offsets of SiO2 on clean <i>n</i>- and <i>p</i>-type GaN(0001)

Cook, T. E.; Fulton, C. C.; Mecouch, W. J.; Tracy, K. M.; Davis, R. F.; Hurt, E. H.; Lucovsky, G.; Nemanich, R. J.

doi:10.1063/1.1559424

Cited by 91 publications

(54 citation statements)

References 46 publications

(52 reference statements)

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“…The respective peaks centered at $8 and 13 eV were characteristic of the O (2p) and Si-O related features. 36 From UPS, the electron affinity of SiO 2 on GaN was determined to be 1.1 6 0.1 eV, which is consistent with a prior study (1.1 eV) 37 and another group's result (1.3 eV). 32 The value of (E Si2s -E V ) SiO2 was calculated as 148.9 eV.…”

Section: Resultssupporting

confidence: 79%

Surface band bending and band alignment of plasma enhanced atomic layer deposited dielectrics on Ga- and N-face gallium nitride

Yang

Eller

Nemanich

2014

Journal of Applied Physics

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The effects of surface pretreatment, dielectric growth, and post deposition annealing on interface electronic structure and polarization charge compensation of Ga-and N-face bulk GaN were investigated. The cleaning process consisted of an ex-situ wet chemical NH 4 OH treatment and an in-situ elevated temperature NH 3 plasma process to remove carbon contamination, reduce oxygen coverage, and potentially passivate N-vacancy related defects. After the cleaning process, carbon contamination decreased below the x-ray photoemission spectroscopy detection limit, and the oxygen coverage stabilized at $1 monolayer on both Ga-and N-face GaN. In addition, Ga-and N-face GaN had an upward band bending of 0.8 6 0.1 eV and 0.6 6 0.1 eV, respectively, which suggested the net charge of the surface states and polarization bound charge was similar on Ga-and N-face GaN. Furthermore, three dielectrics (HfO 2 , Al 2 O 3 , and SiO 2 ) were prepared by plasma-enhanced atomic layer deposition on Ga-or N-face GaN and annealed in N 2 ambient to investigate the effect of the polarization charge on the interface electronic structure and band offsets. The respective valence band offsets of HfO 2 , Al 2 O 3 , and SiO 2 with respect to Ga-and N-face GaN were 1.4 6 0.1, 2.0 6 0.1, and 3.2 6 0.1 eV, regardless of dielectric thickness. The corresponding conduction band offsets were 1.0 6 0.1, 1.3 6 0.1, and 2.3 6 0.1 eV, respectively. Experimental band offset results were consistent with theoretical calculations based on the charge neutrality level model. The trend of band offsets for dielectric/GaN interfaces was related to the band gap and/or the electronic part of the dielectric constant. The effect of polarization charge on band offset was apparently screened by the dielectric-GaN interface states. V C 2014 AIP Publishing LLC.

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Section: Resultssupporting

confidence: 79%

Surface band bending and band alignment of plasma enhanced atomic layer deposited dielectrics on Ga- and N-face gallium nitride

Yang

Eller

Nemanich

2014

Journal of Applied Physics

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“…This value is significantly lower than 10 6 hours typically measured in silicon oxide/silicon carbide capacitors [8]. This result is surprising as the conduction band offset (∆E C ) of between oxide and GaN, thought to be ∆E C = 3.6eV [9], is higher than for oxide and silicon carbide(∆E C = 2.65 eV). In the silicon/silicon dioxide system, the slope of the MTTF versus electric field depends on Fowler-Nordheim tunnelling at high electric field and hot electron effects at lower fields [10].…”

Section: Resultscontrasting

confidence: 46%

Fabrication and characterization of m‐plane (1‐100) GaN based metal‐oxide‐semiconductor capacitors

Tilak

Matocha

Dunne

2008

Phys. Status Solidi (c)

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M‐plane non‐polar, Gallium Nitride(GaN) based metal‐oxide‐semiconductor (MOS) capacitors were fabricated by depositing 150 nm thick low‐pressure chemical vapor deposition silicon dioxide at 900 °C. No positive shift in the flat band voltage of m‐plane GaN MOS capacitors was observed versus temperature, confirming the absence of pyroelectric effects. In contrast, c‐plane (0001) polar, GaN MOS capacitors, show a positive flat band voltage shift versus temperature and the pyroelectric coefficient of –3×109 q/cm2‐K was measured. A small negative shift in flat band voltage was observed in m‐plane GaN consistent with changes in the bulk potential and corresponding decrease in the occupancy of interface traps. Time dependent dielectric(TDDB) measurements were performed at 200 °C and a mean time to failure (MTTF) of 40 hours was measured at an electric field of 5 MV/cm. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…The main advantage of SiO 2 is high barrier value between conduction bands of GaN and dielectric layer [13]. The research on the use of other dielectric materials are conducted, particularly on the high dielectric constant materials (high-κ) such as aluminium oxide (Al 2 O 3 ǫ r =8-9) [14] and hafnium oxide (HfO 2 ǫ r =15-20) [15].…”

Section: Influence Of Relative Permittivity (ǫ R ) Of Gate Dielectmentioning

confidence: 99%

Modelling and Simulation of Normally-Off AlGaN/GaN MOS-HEMTs

Taube¹,

Sochacki²,

Szmidt³

et al. 2014

International Journal of Electronics and Telecommunications

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Abstract-The article presents the results of modelling and simulation of normally-off AlGaN/GaN MOS-HEMT transistors. The effect of the resistivity of the GaN:C layer, the channel mobility and the use of high-κ dielectrics on the electrical characteristics of the transistor has been examined. It has been shown that a low leakage current of less than 10 −6 A/mm can be achieved for the acceptor dopant concentration at the level of 5 × 10 15 cm −3 . The limitation of the maximum on-state current due to the low carrier channel mobility has been shown. It has also been demonstrated that the use of HfO2, instead of SiO2, as a gate dielectric increases on-state current above 0.7A/mm and reduces the negative influence of the charge accumulated in the dielectric layer.

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Measurement of the band offsets of SiO2 on clean n- and p-type GaN(0001)

Cited by 91 publications

References 46 publications

Surface band bending and band alignment of plasma enhanced atomic layer deposited dielectrics on Ga- and N-face gallium nitride

Surface band bending and band alignment of plasma enhanced atomic layer deposited dielectrics on Ga- and N-face gallium nitride

Fabrication and characterization of m‐plane (1‐100) GaN based metal‐oxide‐semiconductor capacitors

Modelling and Simulation of Normally-Off AlGaN/GaN MOS-HEMTs

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