Measurement of single electron lifetimes in a multijunction trap

Dresselhaus, Paul D.; Li, Ji; Han, Siyuan; Lukens, J. E.; Likharev, K. K.

doi:10.1103/physrevlett.72.3226

Cited by 118 publications

(80 citation statements)

References 12 publications

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“…Quantitatively, the implementation of an in-series high-ohmic local resistor R provides a result similar to an extension of the series array by n additional tunnel junctions, where n ∼ R/R Q and R Q ≡ h/e 2 ≈ 25.8 k is the resistance quantum. For example, the hold times in a four-junction R-trap (array with the resistor R ≈ 50 k ) on the scale of hours [15] were found comparable to those for 7 to 9-junction traps without resistors [17,18].…”

Section: Introductionmentioning

confidence: 92%

Single-charge escape processes through a hybrid turnstile in a dissipative environment

et al. 2011

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Abstract. We have investigated the static, charge-trapping properties of a hybrid superconductor-normal metal electron turnstile embedded in a highohmic environment. The device includes a local Cr resistor on one side of the turnstile, and a superconducting trapping island on the other side. The electron hold times, τ ∼ 2-20 s, in our two-junction circuit are comparable with those of typical multi-junction, N 4, normal-metal single-electron tunneling devices. A semi-phenomenological model of the environmental activation of tunneling is applied for the analysis of the switching statistics. The experimental results are promising for electrical metrology applications.

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Section: Introductionmentioning

confidence: 92%

Single-charge escape processes through a hybrid turnstile in a dissipative environment

et al. 2011

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“…Uniform arrays can be used in single electron memories [2] or in electron pumps which may allow a new metrological standard of capacitance [3].…”

mentioning

confidence: 99%

Self-assembled chains of graphitized carbon nanoparticles

Bezryadin

Westervelt

Tinkham

1999

Applied Physics Letters

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We report a technique which allows self-assembly of conducting nanoparticles into long continuous chains. Transport properties of such chains have been studied at low temperatures. At low bias voltages, the charges are pinned and the chain resistance is exponentially high. Above a certain threshold (V T ), the system enters a conducting state. The threshold voltage is much bigger than the Coulomb gap voltage for a single particle and decreases linearly with increasing temperature.A sharp threshold was observed up to about 77 K. Such chains may be used as switchable links in Coulomb charge memories.

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“…The retention time of the memory can be evaluated based on the orthodox theory of single electron tunneling [9]. The electrostatic energy of the system as a function of the memory node charge , the island charge , and the word line voltage is calculated based on the thermodynamics of electrostatic systems (7) Solving charge conservation relations we obtain and as where we assumed is fixed at zero and is included in Integrating (7) and calculating the difference between the final and the initial states of a single charge tunneling event, the barrier height is given as (8) where the Coulomb gap is…”

Section: B Retention Timementioning

confidence: 99%

Design and analysis of high-speed random access memory with Coulomb blockade charge confinement

Katayama

Mizuta

Müller

et al. 1999

IEEE Trans. Electron Devices

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Abstract-A silicon-based memory cell utilizing Coulomb blockade is analyzed for use as a high-speed RAM. Operation principles and design guidelines are given by simple analytical modeling and simulations. By performing transient waveform Monte Carlo simulations, high-speed write operation is demonstrated with a time shorter than 10 ns. The memory node voltage of less than 0.1 V is detected by a newly proposed split-gate cell structure with a minimum disturbance to/from nonselected cells, which indicates the compatibility of this structure with conventional field effect transistors.

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Measurement of single electron lifetimes in a multijunction trap

Cited by 118 publications

References 12 publications

Single-charge escape processes through a hybrid turnstile in a dissipative environment

Single-charge escape processes through a hybrid turnstile in a dissipative environment

Self-assembled chains of graphitized carbon nanoparticles

Design and analysis of high-speed random access memory with Coulomb blockade charge confinement

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