Measurement of shunt resistance and conduction band offset in Cu(In, Ga)Se₂ solar cells through joint analysis of temperature and intensity dependence of open-circuit voltage and photoluminescence

Abstract

Joint analysis studies of open-circuit voltage and photoluminescence intensity (PL-I) are reported for CuIn 1−x Ga x Se 2 (CIGSe) solar cells. A range of compositions are investigated, including constant x = 0.35 and x = 0.55 as well as a graded composition profile having a minimum of x = 0.25. Both the open-circuit voltage and PL-I are measured as functions of temperature and illumination intensity. With these two measurements, a full model-based fitting of the temperature and illumination dependence allows extraction of the effects of window layer band offset and shunt resistance, in addition to bulk and interface recombination parameters. To quantitatively analyze the two distinct measurements jointly, the absolute PL-I is measured to obtain quasi-Fermi-level splitting.

Powering over single mode fiber by shortening working time of IoT device

“…The main reason for the low efficiency of PV cells on low radiation is the shunt resistance. In [10] authors present CIGS (Copper Indium Gallium Selenide) solar cells on low radiation and different wavelengths. For our work the wavelength of 850 nm could be interesting.…”

Temperature‐ and Bias‐Dependent Degradation and Regeneration of Perovskite Solar Cells with Organic and Inorganic Hole Transport Layers

“…[8] The combination of temperature-and illumination-dependent V oc can even provide insight into band offsets at the boundary hole transport layer (HTL) or electron transport layer (ETL). [9][10][11] These techniques have also been applied to PSCs [ ; [12][13][14][15][16][17] however, unambiguous results are quite difficult to obtain for a number of reasons.…”