Measurement of residual stress and elastic modulus of polycrystalline 3C-SiC films deposited by low-pressure chemical vapor deposition

Fu, Xiao An; Dunning, J.; Zorman, Christian A.; Mehregany, Mehran

doi:10.1016/j.tsf.2005.07.236

Cited by 42 publications

(38 citation statements)

References 32 publications

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“…Figure 2 shows the meshed models for circular and square membranes. In order to obtain accurate results at the spot where maximum stress Poisson's ratio of m = 0.168 (Fu 2005), (Lambrecht et al 1991) is used for the SiC layers. Literature values are given as a comparison and strain are expected, the mesh density is increased towards the clamping of the membranes.…”

Section: Finite Element Analysismentioning

confidence: 99%

“…Table 1 gives an overview of some published results. Bulge testing is widely employed for determining Young's modulus and residual stress of polycrystalline 3C-SiC (Fu 2005); (Roy et al 2006);(von Berg et al 1996) as well as single crystal 3C-SiC (Mehregany et al 1997);(von Berg et al 1996); (Zhou et al 2008); (Mitchell et al 2003). In this method, pressure-dependent membrane deflection is measured.…”

Section: Introductionmentioning

confidence: 99%

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Measurement of Young’s modulus and residual stress of thin SiC layers for MEMS high temperature applications

et al. 2012

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Silicon carbide (SiC) is a promising material for applications in harsh environments. Standard silicon (Si) microelectromechanical systems (MEMS) are limited in operating temperature to temperatures below 130°C for electronic devices and below 600°C for mechanical devices. Due to its large bandgap SiC enables MEMS with significantly higher operating temperatures. Furthermore, SiC exhibits high chemical stability and thermal conductivity. Young's modulus and residual stress are important mechanical properties for the design of sophisticated SiCbased MEMS devices. In particular, residual stresses are strongly dependent on the deposition conditions. Literature values for Young's modulus range from 100 to 400 GPa, and residual stresses range from 98 to 486 MPa. In this paper we present our work on investigating Young's modulus and residual stress of SiC films deposited on single crystal bulk silicon using bulge testing. This method is based on measurement of pressure-dependent membrane deflection. Polycrystalline as well as single crystal cubic silicon carbide samples are studied. For the samples tested, average Young's modulus and residual stress measured are 417 GPa and 89 MPa for polycrystalline samples. For single crystal samples, the according values are 388 GPa and 217 MPa. These results compare well with literature values.

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Section: Finite Element Analysismentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Measurement of Young’s modulus and residual stress of thin SiC layers for MEMS high temperature applications

et al. 2012

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“…Early work studying poly-SiC films deposited by LPCVD on Si substrates indicated that the Young's modulus of poly-SiC ranged from 357 GPa [84] to 510 GPa [85], with the higher values associated with boron-doped films. More recently, the Young's modulus of undoped poly-SiC films deposited by LPCVD using the DCS/acetylene precursor system was reported to be 401 GPa [86], which decreased to 330 GPa when the films were heavily doped with nitrogen [77]. It has been shown that films deposited by APCVD on polysilicon using the 3C-SiC epitaxial growth process have a Young's modulus that depends upon the microstructure of the films [32].…”

Section: Bulk Micromachined Devicesmentioning

confidence: 99%

“…It is interesting to note that the films studied in Refs. [77] and [86], while being deposited by LPCVD, also had a columnar microstructure. The burst strength for the APCVD poly-SiC films, as determined using micromachined membranes, was highest for the columnar films at 1718 MPa and lowest for the equiaxed films at 1321 MPa [32].…”

Section: Bulk Micromachined Devicesmentioning

confidence: 99%

Micro‐ and nanomechanical structures for silicon carbide MEMS and NEMS

Zorman

Parro

2008

Physica Status Solidi (b)

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Silicon carbide (SiC) is recognized as the leading semiconductor for high power and high temperature electronics owing to its outstanding electrical properties combined with mature processing technologies for monolithic structures. SiC has long been known for its outstanding mechanical and chemical properties making it equally attractive for mechanical structures in micro‐ and nanoelectromechanical systems (MEMS and NEMS). Recent advancements in bulk and surface micromachining have led to the development of SiC analogues to common Si‐based devices (i.e., resonators, pressure sensors). This paper presents an overview of MEMS and NEMS technologies that incorporate SiC as a key component in their mechanical structure, providing both a historical perspective as well as recent developments. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…In the context of elastomechanical thin film probing, the bulge test was first reported in 1959 by Beams. 37 Since then this method has evolved continuously [38][39][40][41][42] and has been applied to a large variety of different thin-film materials. [43][44][45][46][47] Nowadays, the bulge test, also called load-deflection (LD) method, is a very common and convenient procedure to extract Young's modulus and residual tensile stress from measurements of the maximum outof-plane deflection w 0 of laterally suspended diaphragms in response to a uniformly distributed transverse load p. This technique enables simultaneous determination of E and r 0 by fitting a theoretically derived LD characteristic to experimentally obtained data.…”

Section: Introductionmentioning

confidence: 99%

A two-step load-deflection procedure applicable to extract the Young's modulus and the residual tensile stress of circularly shaped thin-film diaphragms

Beigelbeck

Schneider

Schalko

et al. 2014

Journal of Applied Physics

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We report on a novel two-step load-deflection (LD) formula and technique that enables an accurate extraction of the Young's modulus and the residual tensile stress from LD measurements on circularly shaped thin-film diaphragms. This LD relationship is derived from an adaptation of Timoshenko's plate bending theory, where the in-plane and out-of-plane deflections are approximated by series expansions. Utilizing the minimum total potential energy principle yields an infinitedimensional system of equations which is solved analytically resulting in a compact closed-form solution. In the appendant measurement procedure, the whole transverse bending characteristic of the diaphragm as a function of the radial coordinate is recorded for different pressure loads and introduced into the novel LD equation in order to determine the elastomechanical parameters of interest. The flexibility of this approach is demonstrated by ascertaining the Young's modulus and the residual tensile stress of two disparate diaphragm materials made of either micromachined silicon or microfiltered buckypapers composed of carbon nanotube compounds. V C 2014 AIP Publishing LLC.

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Measurement of residual stress and elastic modulus of polycrystalline 3C-SiC films deposited by low-pressure chemical vapor deposition

Cited by 42 publications

References 32 publications

Measurement of Young’s modulus and residual stress of thin SiC layers for MEMS high temperature applications

Measurement of Young’s modulus and residual stress of thin SiC layers for MEMS high temperature applications

Micro‐ and nanomechanical structures for silicon carbide MEMS and NEMS

A two-step load-deflection procedure applicable to extract the Young's modulus and the residual tensile stress of circularly shaped thin-film diaphragms

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