2005
DOI: 10.1016/j.nucengdes.2004.11.006
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Measurement of plastic strain of polycrystalline material by electron backscatter diffraction

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Cited by 215 publications
(123 citation statements)
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“…Strain assessment was carried out by local misorientation approach (Kamaya et al, 2005) and represented by Kernel Average Misorientation (KAM) parameter. According to its definition, value of KAM parameter is obtained in following way: for a given data point the average misorientation between the data point and all of its neighbors is calculated (exclude misorientations greater than some prescribed value -5° in this case).…”
Section: Methods Of Investigationmentioning
confidence: 99%
“…Strain assessment was carried out by local misorientation approach (Kamaya et al, 2005) and represented by Kernel Average Misorientation (KAM) parameter. According to its definition, value of KAM parameter is obtained in following way: for a given data point the average misorientation between the data point and all of its neighbors is calculated (exclude misorientations greater than some prescribed value -5° in this case).…”
Section: Methods Of Investigationmentioning
confidence: 99%
“…The degree of plastic strain and the associated stored energy are very important for material scientists to study the growth rate of stress corrosion cracking (SCC) [24] and the driving force of recrystallization [1], respectively. Changes in the IQ value and in local orientation have been used to study the strain and stored energy [1,24,25].…”
Section: Strain and Stored Energymentioning
confidence: 99%
“…Changes in the IQ value and in local orientation have been used to study the strain and stored energy [1,24,25]. IQ value, the quality of the diffraction patterns, indicates the distortion degree of crystal lattices in the diffraction patterns [26].…”
Section: Strain and Stored Energymentioning
confidence: 99%
“…Misorientation between neighboring points is a parameter derived from the measured orientation, and is used to quantify the degree of plastic strain induced in a material. [1][2][3][4][5] However, the measurement of crystal orientation has an error of 0.1-1 depending on various factors such as the number of pixels of the CCD camera used to capture EBSD patterns, 6) parameters for data processing for identifying the orientation from obtained EBSD patterns and the plastic strain. [7][8][9] The magnitude of the error becomes relatively large for a small misorientation.…”
Section: Introductionmentioning
confidence: 99%