Measurement of mechanical stresses induced by hybrid shallow-trench-isolation for dynamic random access memory using recess channel array transistor structure

Lee, Seonhaeng; Kim, Dongwoo; Kim, Cheolgyu; Oh, T. K.; Y., S.; Hong, Soon-Il; Kang, Bongkoo

doi:10.1016/j.mee.2011.10.015

Cited by 6 publications

(4 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Each line was obtained by finding ϕ f that resulted in straight lines. 21) N d was calculated using the values of γ (inset, Fig. 2).…”

Section: Resultsmentioning

confidence: 99%

“…N d decreased as L decreased, which might indicate that the mechanical stress varied with L; because a difference in mechanical stress can produce a difference in N d between MOSFETs fabricated using the same process. 21) The drain-body junction current at a high V db differs from ideal diode current because of a voltage drop in the quasi-neutral region with the series resistance R s . The junction voltage V j is given by V j = V db − I db R s and R s is given by…”

Section: Resultsmentioning

confidence: 99%

“…[12][13][14][15][16][17][18] Two electrical methods of estimating σ on the Si substrate of MOSFETs have been proposed; one uses a change in μ due to σ 2,19) and the other uses a change in the subthreshold current I d(sub) . 20,21) The method of using μ measures the difference Δμ in μ between a stress-free reference MOSFET and a stressed measurement MOSFET, and then uses the fact that Δρ=ρ ≈ −Δμ=μ, where ρ ∝ 1=μ is the resistivity, and estimates σ by dividing −Δμ=μ by the effective piezoresistive coefficient 22) in the direction of the channel. However, because ρ is a function of carrier density that varies with E g , 23,24) some error in the σ estimate is unavoidable with this method.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Method of estimating mechanical stress on Si body of MOSFET using drain–body junction current

Seo

Kim

Son

et al. 2016

Jpn. J. Appl. Phys.

Self Cite

View full text Add to dashboard Cite

A simple and accurate method of estimating the mechanical stress σ on the Si body of a MOSFET is proposed. This method measures the doping concentration of the body, N d, and the onset voltage V hl for the high-level injection of the drain–body junction, uses N d, the ideality factor η, and the Fermi potential ϕf ≈ V hl/2η to calculate the intrinsic carrier concentration n i of the Si body, and then uses the calculated n i to obtain the bandgap energy E g of the Si body. σ is estimated from E g using the deformation potential theory. The estimates of σ agree well with those obtained using previous methods. The proposed method requires one MOSFET, whereas the others require at least two MOSFETs, so the proposed method can give an absolute measurement of σ on the Si body of a MOSFET.

show abstract

“…Each line was obtained by finding ϕ f that resulted in straight lines. 21) N d was calculated using the values of γ (inset, Fig. 2).…”

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Method of estimating mechanical stress on Si body of MOSFET using drain–body junction current

Seo

Kim

Son

et al. 2016

Jpn. J. Appl. Phys.

Self Cite

View full text Add to dashboard Cite

show abstract

“…26) For electrical isolation between the active regions of neighboring complementary metal-oxide semiconductor devices, a hybrid shallow trench isolation (STI) with a mixture of the high-density-plasma chemical-vapor-deposition STI and spin-on-glass STI was used. 27,28) A SiGe channel with a Si capping layer was formed by treatment with dilute HF. Then to form a gate dielectric that has a double stack structure, IL was first formed by thermal oxidation.…”

Section: Experimental Methodsmentioning

confidence: 99%

Channel-length dependence of the generation of interface states and oxide-trapped charges on drain avalanche hot carrier degradation of HfSiON/SiO₂p-channel MOSFETs with strained Si/SiGe channel

Kim¹,

Roh²,

Kang³

2020

Jpn. J. Appl. Phys.

Self Cite

View full text Add to dashboard Cite

This paper evaluates how channel length L affects the drain avalanche hot carrier degradation (DAHC) degradation mechanism of HfSiON/SiO 2 pMOSFETs that have strained Si/SiGe channel. DAHC degradation occurred as L was to reduced < 70 nm, and the amount of degradation increased as L decreased. In the early stage of stress, DAHC degradation increased positively due to generation of negative oxide charges -Q ox , but gradually-generated interface states N it neutralize -Q ox , so a transition point occurs and eventually DAHC increases negatively after sufficient stress time t s . The distribution of DAHC degradation was also analyzed after t s = 4000, 40000 s. The effects of additional generation of -Q ox and N it on DAHC degradation contribute more near the drain edge than to the center region, and increase as L decreases. Therefore, further research on the DAHC degradation mechanism should be conducted to predict the reliability of HfSiON/SiO 2 pMOSFETs with mechanical strain engineering.

show abstract

Channel width dependence of mechanical stress effects induced by shallow trench isolation on device performance of nanoscale nMOSFETs

Lee¹,

Kim²,

Kim³

et al. 2012

Microelectronics Reliability

Self Cite

View full text Add to dashboard Cite

Measurement of mechanical stresses induced by hybrid shallow-trench-isolation for dynamic random access memory using recess channel array transistor structure

Cited by 6 publications

References 15 publications

Method of estimating mechanical stress on Si body of MOSFET using drain–body junction current

Method of estimating mechanical stress on Si body of MOSFET using drain–body junction current

Channel-length dependence of the generation of interface states and oxide-trapped charges on drain avalanche hot carrier degradation of HfSiON/SiO₂p-channel MOSFETs with strained Si/SiGe channel

Channel width dependence of mechanical stress effects induced by shallow trench isolation on device performance of nanoscale nMOSFETs

Contact Info

Product

Resources

About

Measurement of mechanical stresses induced by hybrid shallow-trench-isolation for dynamic random access memory using recess channel array transistor structure

Cited by 6 publications

References 15 publications

Method of estimating mechanical stress on Si body of MOSFET using drain–body junction current

Method of estimating mechanical stress on Si body of MOSFET using drain–body junction current

Channel-length dependence of the generation of interface states and oxide-trapped charges on drain avalanche hot carrier degradation of HfSiON/SiO2p-channel MOSFETs with strained Si/SiGe channel

Channel width dependence of mechanical stress effects induced by shallow trench isolation on device performance of nanoscale nMOSFETs

Contact Info

Product

Resources

About

Channel-length dependence of the generation of interface states and oxide-trapped charges on drain avalanche hot carrier degradation of HfSiON/SiO₂p-channel MOSFETs with strained Si/SiGe channel