Measurement of low-order structure factors for silicon from zone-axis CBED patterns

Saunders, Martin; Bird, David M.; Zaluzec, Nestor J.; Burgess, W.G.; Preston, A. R.; Humphreys, C. J.

doi:10.1016/0304-3991(95)00058-1

Cited by 60 publications

(31 citation statements)

References 8 publications

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“…Many experimental and theoretical investigations were carried out on the scatttering potential of silicon crystal for electron diffraction (KREUTLE & MEYER-EHMSEN 1971, VOSS et al 1980, SAUNDERS et al 1995, SAUNDERS et al 1996, DOYLE & TUNER 1968, RADI 1970. The measured values of several low indexed Fourier coefficients are relatively well coincident with data obtained by the precise measurement done by X-ray diffraction (ALDRED & HART 1973).…”

Section: Introductionmentioning

confidence: 82%

Determination of the Mean Absorption Potential of Si for Electrons by Energy Loss Spectroscopy

Uchida

Spillecke

Lehmpfuhl

et al. 1999

Cryst. Res. Technol.

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Complex structure potentials of silicon for 111 systematic diffraction were measured by convergent beam electron diffraction technique (Kossel -Möllenstedt pattern). The imaginary mean potential and its different components were determined directly by measuring the energy loss spectra of transmitted elctrons by means of an imaging filter (GIF) installed in the electron microscope. The imaginary mean inner potential was estimated to be 0.63 eV. The component of the imaginary inner potential due to plasmon excitation was estimated to be 0.53 eV. Some low indexed Fourier components were determined by matching intensity simulations to Kossel-Möllenstedt patterns. The absorption potential due to thermal vibration was found to be in the order of the full Einstein model.

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Section: Introductionmentioning

confidence: 82%

Determination of the Mean Absorption Potential of Si for Electrons by Energy Loss Spectroscopy

Uchida

Spillecke

Lehmpfuhl

et al. 1999

Cryst. Res. Technol.

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“…Re®nements of the low-order structure factors using ZOLZ CBED patterns were performed by Saunders et al (1995Saunders et al ( , 1996, Nu È chter et al (1998a) and Zuo et al (1999). It should be noted that the accurate determination of Debye±Waller factors, which can be performed successfully by our re®nement method with the use of HOLZ re¯ections, is crucial to obtaining high-precision low-order structure factors for X-rays.…”

Section: Figurementioning

confidence: 99%

“…have been reported by many researchers (Vincent et al, 1984a,b;Zuo et al, 1989Zuo et al, , 1993Zuo et al, , 1997Zuo et al, , 1999Tanaka & Tsuda, 1990, 1991Deininger et al, 1994;Tsuda & Tanaka, 1995Saunders et al, 1995Saunders et al, , 1996Saunders et al, , 1999aHolmestad et al, 1995;Nu È chter et al, 1998a,b;Jansen et al, 1998;Wu et al, 1999;Streltsov et al, 2001). The method has the following advantages in contrast to the X-ray and neutron diffraction methods:…”

Section: Introductionmentioning

confidence: 99%

Refinement of crystal structural parameters and charge density using convergent-beam electron diffraction – the rhombohedral phase of LaCrO₃

et al. 2002

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Atom positions and anisotropic Debye±Waller factors of the rhombohedral phase of LaCrO 3 have been re®ned simultaneously with the low-order structure factors, using a structure-analysis method of convergent-beam electron diffraction (CBED) proposed by Tsuda & Tanaka [Acta Cryst. (1999), A55, 939±954]. The method is based on the least-squares ®tting between full dynamical calculations and energy-®ltered intensities of two-dimensional higher-order Laue-zone (HOLZ) and zeroth-order Laue-zone (ZOLZ) CBED patterns. The positions of the oxygen atoms have been determined with a high precision. Clear anisotropy of the thermal vibrations of the oxygen atoms has been successfully determined by the CBED method for the ®rst time. The charge transfer from the La and Cr atoms to the O atoms has been found from the deformation charge-density map.

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“…To keep high speed of convergence of LSQ method and to overcome its weak ability to ignore local minima, it was proposed to use a quasi-Newton method in Refs. [25,26] and nonlinear LSQ in program MBFIT [13]. The most reasonable strategy seems to divide refining parameters into two groups, depending on the degree of smoothness of functional corresponding to them and to carry out refinement by different methods.…”

Section: Introductionmentioning

confidence: 99%

Crystal structure refinement using Bloch-wave method for precession electron diffraction

2007

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Measurement of low-order structure factors for silicon from zone-axis CBED patterns

Cited by 60 publications

References 8 publications

Determination of the Mean Absorption Potential of Si for Electrons by Energy Loss Spectroscopy

Determination of the Mean Absorption Potential of Si for Electrons by Energy Loss Spectroscopy

Refinement of crystal structural parameters and charge density using convergent-beam electron diffraction – the rhombohedral phase of LaCrO₃

Crystal structure refinement using Bloch-wave method for precession electron diffraction

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Measurement of low-order structure factors for silicon from zone-axis CBED patterns

Cited by 60 publications

References 8 publications

Determination of the Mean Absorption Potential of Si for Electrons by Energy Loss Spectroscopy

Determination of the Mean Absorption Potential of Si for Electrons by Energy Loss Spectroscopy

Refinement of crystal structural parameters and charge density using convergent-beam electron diffraction – the rhombohedral phase of LaCrO3

Crystal structure refinement using Bloch-wave method for precession electron diffraction

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Refinement of crystal structural parameters and charge density using convergent-beam electron diffraction – the rhombohedral phase of LaCrO₃