Measurement of IGBT switching characteristics and loss using coaxial current transformer

Kumar, Vikash; Reddy, S Ravi Prakash; Narayanan, G.

doi:10.1109/iicpe.2012.6450478

Cited by 10 publications

(7 citation statements)

References 3 publications

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“…Commonly, V BR will be a large value, which will reset the circuit dramatically. Then, the saturation current transferred to the primary side can be derived by (12).…”

Section: Saturation Analysismentioning

confidence: 99%

“…In recent years, wide bandgap (WBG) power devices, such as silicon carbide (SiC) and gallium nitride (GaN), have gained increasing attention and adoption in various fields, including automotive, renewable energy, and consumer electronics [ 1 , 2 , 3 , 4 , 5 ] to provide higher efficiency, switching frequency, and power density [ 6 , 7 , 8 ]. To research the properties and behaviors of WBG devices, the switching current measurement becomes an increasingly important study approach [ 9 , 10 , 11 , 12 , 13 , 14 , 15 ]. Moreover, overcurrent protection is an essential functionality that prevents semiconductor switches from failure, especially in high-power applications at medium voltage levels, where the components are expensive and a failure may lead to catastrophic consequences [ 16 , 17 , 18 ].…”

Section: Introductionmentioning

confidence: 99%

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A Nonlinear-Model-Based High-Bandwidth Current Sensor Design for Switching Current Measurement of Wide Bandgap Devices

Chen

et al. 2023

Sensors

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With the growing adoption of wide bandgap devices in power electronic applications, current sensor design for switching current measurement has become more important. The demands for high accuracy, high bandwidth, low cost, compact size, and galvanic isolation pose significant design challenges. The conventional modeling approach for bandwidth analysis of current transformer sensors assumes that the magnetizing inductance remains constant, which does not always hold true in high-frequency operations. This can result in inaccurate bandwidth estimation and affect the overall performance of the current sensor. To address this limitation, this paper provides a comprehensive analysis of nonlinear modeling and bandwidth, considering the varying magnetizing inductance in a wide frequency range. A precise and straightforward arctangent-based fitting algorithm was proposed to accurately emulate the nonlinear feature, and the fitting results were compared with the magnetic core’s datasheet to confirm its accuracy. This approach contributes to more accurate bandwidth prediction in field applications. In addition, the droop phenomenon of the current transformer and saturation effects are analyzed in detail. For high-voltage applications, different insulation methods are compared and an optimized insulation process is proposed. Finally, the design process is experimentally validated. The bandwidth of the proposed current transformer is around 100 MHz and the cost is around $20, making it a low-cost and high-bandwidth solution for switching current measurements in power electronic applications.

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“…Commonly, V BR will be a large value, which will reset the circuit dramatically. Then, the saturation current transferred to the primary side can be derived by (12).…”

Section: Saturation Analysismentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A Nonlinear-Model-Based High-Bandwidth Current Sensor Design for Switching Current Measurement of Wide Bandgap Devices

Chen

et al. 2023

Sensors

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show abstract

“…One energy-efficient and feasible option is to conduct the double-pulse test [12] . The device voltage and the load current (shared by two devices) are shown in Fig.…”

Section: B Chopper Test and Double-pulse Testmentioning

confidence: 99%

Study on gate characteristics and drive circuit for 300A/1200V insulated gate bipolar transistors

Babu¹,

Narayanan

2014

2014 IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT)

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This paper presents the design and testing of a gate drive circuit for two parallel-connected 300AI1200V insulated gate bipolar transistors (IGBTs), meant for a 200-kVA voltage source converter. The drive circuit is tested under normal as well as fault conditions. The drive circuit performance is shown to be affected by the parasitic inductance in the gate circuitry. A procedure for estimating the equivalent gate inductance based on the measured switching characteristics is presented. The de pendence of the Miller plateau voltage in the gate characteristics on the gate resistance and the magnitude of current switched is studied experimentally. The effect of off-state gate voltage on the switching characteristics is also studied experimentally. A procedure to determine the safe minimum negative-bias gate voltage is indicated.

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“…A coaxial CT (CCT) provides isolation, high bandwidth and low leakage inductance. Since the leakage inductance of a CCT is quite low, the bus-bar inductance does not increase significantly with the insertion of a CCT in the power circuit [13,26,27].…”

Section: Introductionmentioning

confidence: 99%

“…Thus, the geometry of the module constrains the height of the CCT. The design of this CCT, including its mounting arrangement, is discussed in detail in [26]. The dimensions of the CCT are tabulated in Table 1.…”

Section: Introductionmentioning

confidence: 99%

Experimental characterisation and performance evaluation of a coaxial current transformer for measurement of insulated gate bipolar transistor switching current

Ghosh¹,

Narayanan²

2015

IET Science, Measurement & Technology

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Measurement of IGBT switching characteristics and loss using coaxial current transformer

Cited by 10 publications

References 3 publications

A Nonlinear-Model-Based High-Bandwidth Current Sensor Design for Switching Current Measurement of Wide Bandgap Devices

A Nonlinear-Model-Based High-Bandwidth Current Sensor Design for Switching Current Measurement of Wide Bandgap Devices

Study on gate characteristics and drive circuit for 300A/1200V insulated gate bipolar transistors

Experimental characterisation and performance evaluation of a coaxial current transformer for measurement of insulated gate bipolar transistor switching current

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