Measurement of barrier height and its controlling parameters in bulk barrier diodes

Abstract

Bulk barrier diodes are majority carrier diodes, in which the current is given by the thermionic emission of carriers over a barrier present in the bulk of the material. The height of this barrier depends on the dopings of the various layers of the diode, which has a p+np or n+pn structure. In this paper, different ways to determine this barrier height and its controlling parameters, have been suggested by considering the effect of temperature on the current and the applied voltage of the device.