Determination of barrier height and technological parameters of triangular barrier diodes

Abstract

Triangular barrier diodes (TBD) are multilayer bulk unipolar diodes having n+–i–p++–i–n+ structure where the two intrinsic regions have unequal lengths. The current in the device is due to the thermionic emission of electrons over a barrier formed in the p++ region. In this paper a number of theoretical techniques are proposed to calculate the height of this barrier and other technological parameters, viz. doping densities of n‐ and p‐layers and the lengths of the two intrinsic regions. The calculations are made possible by studying the current‐temperature, current‐ voltage, and voltage‐temperature characteristics of the device. The methods for determining the various parameters are shown to be simple and easy to carry out.