Control of the barrier height of triangular-barrier diodes by doping their intrinsic layers

Abstract

A modified Norde function for the measurement of the series resistance and the voltagedependent barrier height of triangular barrier diodes Barrier height reduction of the Schottky barrier diode using a thin highly doped surface layer An analytic model for the control of the barrier height of a triangular-barrier diode (TBD) is proposed. It is shown that an extra (p-or n-type) doping given to the two intrinsic layers of a TBD changes its barrier height over a wide range (over all 40% ). A simple closed-form expression is derived to give the dependence of barrier height on the extra dopings. It is seen that the ideality of the diode is not affected in spite of a wide range of changes obtained in the barrier height. Furthermore, the differential resistance of the device is shown to exponentially decrease with the extra n-type doping given to the structure. Such a strong dependence leads to an improvement in the forward-bias cutoff frequency of the device.