Measurement and Interpretation of stress in aluminum-based metallization as a function of thermal history

Flinn, P. A.; Gardner, Donald S.; Nix, William D.

doi:10.1109/t-ed.1987.22981

Cited by 566 publications

(181 citation statements)

References 8 publications

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“…This is a great advantage over other reported apparatus in which the curvature is obtained by either scanning a laser beam over a fixed sample or moving the sample while it is being scanned by a stationary laser beam. [40][41][42] In these kinds of systems, the measurement of the curvature can be largely influenced by small deviations of either the laser beam or the sample position. The use of two laser beams, as in Fig.…”

Section: B Coefficient Of Thermal Expansion and Biaxial Modulus Measmentioning

confidence: 99%

Coefficient of thermal expansion and elastic modulus of thin films

Lima

Lacerda

Vilcarromero

et al. 1999

Journal of Applied Physics

134

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The coefficient of thermal expansion ͑CTE͒, biaxial modulus, and stress of some amorphous semiconductors ͑a-Si:H, a-C:H, a-Ge:H, and a-GeC x :H͒ and metallic ͑Ag and Al͒ thin films were studied. The thermal expansion and the biaxial modulus were measured by the thermally induced bending technique. The stress of the metallic films, deposited by thermal evaporation ͑Ag and Al͒, is tensile, while that of the amorphous films deposited by sputtering ͑a-Si:H, a-Ge:H, and a-GeC x :H͒ and by glow discharge (a-C:H) is compressive. We observed that the coefficient of thermal expansion of the tetrahedral amorphous thin films prepared in this work, as well as that of the films reported in literature, depend on the network strain. The CTE of tensile films is smaller than that of their corresponding crystalline semiconductors, but it is higher for compressive films. On the other hand, we found out that the elastic biaxial modulus of the amorphous and metallic films is systematically smaller than that of their crystalline counterparts. This behavior stands for other films reported in the literature that were prepared by different techniques and deposition conditions. These differences were attributed to the reduction of the coordination number and to the presence of defects, such as voids and dangling bonds, in amorphous films. On the other hand, columnar structure and microcrystallinity account for the reduced elasticity of the metallic films.

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Section: B Coefficient Of Thermal Expansion and Biaxial Modulus Measmentioning

confidence: 99%

Coefficient of thermal expansion and elastic modulus of thin films

Lima

Lacerda

Vilcarromero

et al. 1999

Journal of Applied Physics

134

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“…We employ the wafer curvature method to measure the stress in the thin film. 8 Two parallel HeNe laser beams 40 mm apart fall on the Si wafer. After traveling 10 m the distance between the two beams is measured.…”

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confidence: 99%

Tensile stress in hard metal films

Janssen

Dammers²,

Sivel³

et al. 2003

Applied Physics Letters

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Thin films on substrates are usually in a stressed state. An important, but trivial, contribution to that stress stems from the difference in thermal expansion coefficient of substrate and film. Much more interesting are the intrinsic stresses, resulting from the growth and/or microstructure of the film. Intrinsic compressive stress was explained by d'Heurle in 1970. Intrinsic tensile stress for recrystallizing metal films was treated succesfully by Doljack and Hoffman in 1972. In the present letter we explain the occurrence of tensile stress in nonrecrystallizing metal films. The explanation is based on modern grain growth models and accurate stress measurements. The key ingredient to the explanation is the proof of the existence of a stress gradient in nonrecrystallizing metal films.

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“…It was assumed that the curvature change in substrate also represents the change in curvature of the film in the absence of film delamination. The radius of curvature was measured by 3-D optical interferometric surface mapping [11] and laser scanning [12]. For both the optical and laser scanning methods, three to five curvature measurements in the x-and y-directions were made for each specimen (Fig.…”

Section: Methodsmentioning

confidence: 99%