Measurement and Analysis of Thermal Parameters and Efficiency of Laser Heterostructures and Light-Emitting Diodes

Abstract

Measurement and Analysis of Thermal Parameters and Efficiency of Laser Heterostructures and Light-Emitting DiodesA thermal resistance characterization of semiconductor quantum-well heterolasers in the AlGaInAs-AlGaAs system (λst≈ 0.8 μm), GaSb-based laser diodes (λst≈ 2 μm), and power GaN light-emitting diodes (visible spectral region) was performed. The characterization consists in investigations of transient electrical processes in the diode sources under heating by direct current. The time dependence of the heating temperature of the active region of a source ΔT(t), calculated from direct bias change, is analyzed using a thermalRTCTequivalent circuit (the Foster and Cauer models), whereRTis the thermal resistance andCTis the heat capacity of the source elements and external heat sink. By the developed method, thermal resistances of internal elements of the heterolasers and light-emitting diodes are determined. The dominant contribution of a die attach layer to the internal thermal resistance of both heterolaser sources and light-emitting diodes is observed. Based on the performed thermal characterization, the dependence of the optical power efficiency on current for the laser diodes is determined.

Comparative analysis of the thermal resistance profiles of power light-emitting diodes cree and rebel types

“…5). We have analyzed the structure functions by the T3Ster method and by Transient Thermal Differential Spectrometry (TTDS) developed in [3,5,6]. An example for Cree XPE is presented in Fig.…”

“…Additional method of LED characterization consists in investigations of transient electrical processes in the diode sources under heating by direct current. The time dependence of the temperature of the active region of a source provides discrete and differential spectra of thermal impedance resistance [3]. By the developed method, thermal resistances of internal elements of the heterolasers and LEDs are determined.…”

The Quantum SI - Towards the New Systems of Units

“…The new defined kelvin can be more useful for measurements of thermal properties of materials in nanotechnology, see [18].…”

Transient multiexponential signals analysis using Bayesian deconvolution

“…Multiexponential transient signals have played a particularly important role in many areas of science and technology, such as nuclear magnetic resonance for medical diagnosis [1], electronic component reliability study [2], thermal transient characteristics for semiconductor device [3], etc. Generally the measured data of these applications can be accurately modeled by a superposition of exponentials of the form [4] S(τ ) = M i=1 A i exp(−λ i τ ) + n(τ ), (1) where M is the number of components, A i and λ i are the amplitude of the ith component and the corresponding decay rate respectively.…”