Comparative analysis of the thermal resistance profiles of power light-emitting diodes cree and rebel types

Abstract

Analysis of the thermal resistance of power lightemitting diodes (LEDs) of Cree and Rebel types is developed. Components of the thermal resistance of the diodes are determined and several distinguishes between different methods are obtained. Behavior of bottleneck effect related to definite interfaces is established. The value of LED active junction area is evaluated too.

Research of the thermal interface of LED lighting sources by thermal relaxation differential spectrometry (TRDS)

“…From the layer-by-layer values of the components of thermal resistance and heat capacity, the effective cross-sectional area of the heat flux (Sе) in the structure under study, and the profile of its distribution from the active layer to the outer boundary of the sample under study were determined [1].…”

“…For comparison, similar studies were performed low power lamps. The analysis of the thermal parameters of the measured sample was carried out by the method of thermal relaxation differential spectrometry (TRDS) using a relaxation impedance spectrometer developed at the Belarusian National Technical University (BNTU) [1,2]. In the TRDS method, as opposed to the known methods that use the structure-function and the differential structure function [2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17], as well as those included in the standard [18], the output of measurement results of the thermal parameters of the measured samples is carried out in the form of a spectrum of thermal parameters, similar to conventional types of spectrum, for example, optical.…”

Determination of transient thermal characteristics for thermal electric behavioral models of integrated circuits

“…In [26][27][28][29], the authors used the original method of thermal relaxation spectrometry to analyze TTR. In [27], the thermal parameters of high-power bipolar transistors in plastic cases TO-252 and TO-126 were estimated using thermal relaxation differential spectrometry.…”

Improving of Accuracy in the Study of Thermal Fields by Ir Microscopy

“…Вследствие того, что материалы, из которых состоят элементы электроники (Si, GaN, Au и др.) имеют низкую излучательную способность в области чувствительности ИК-микроскопа, точность определения температуры падает, а иногда само определение становится невозможно [2,3]. В качестве материала с высокой излучательной способностью был выбран оптический силикон, который, благодаря толщине и малой теплоемкости, не влияет на распределение температуры, но значительно повышает интенсивность ИК излучения от объекта исследования.…”