2020
DOI: 10.3389/fphy.2020.00115
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Measurement and ab initio Investigation of Structural, Electronic, Optical, and Mechanical Properties of Sputtered Aluminum Nitride Thin Films

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Cited by 30 publications
(5 citation statements)
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“…2). A lattice constant 'a' with 3.104 Å was reported by a previous study (Alsaad et al 2020) for AlN thin-film deposited with other sputtering parameters with different X-ray diffraction peaks, e.g. (100), (002), and (101).…”
Section: X-ray Diffraction (Xrd)mentioning
confidence: 62%
“…2). A lattice constant 'a' with 3.104 Å was reported by a previous study (Alsaad et al 2020) for AlN thin-film deposited with other sputtering parameters with different X-ray diffraction peaks, e.g. (100), (002), and (101).…”
Section: X-ray Diffraction (Xrd)mentioning
confidence: 62%
“…In the case of Au/D-TiO 2 , the crystallographic peaks of Au could be detected ( Figure 1A). Defects in D-TiO 2 were tested by electron paramagnetic resonance (EPR) measurements ( Figure 1B), which indicated an aerobic vacancy defect with a g value of 2.015 [23][24][25].…”
Section: Resultsmentioning
confidence: 99%
“…The crystallinity of AlN is influenced by deposition conditions and has been widely investigated in optoelectronics. Lowering chamber pressures increase n and k of AlN by affecting crystal sizes and lattice constants (Figure c). The bandgap of the AlN edge can be further optimized by adjusting substrate temperatures when AlN films are grown …”
Section: Bandgap Engineering For Metasurfacesmentioning
confidence: 99%