Measured propagation characteristics of coplanar waveguide on semi-insulating 4H-SiC through 800 K

High Temperature Characteristics of Coplanar Waveguide on R-Plane Sapphire and Alumina

“…The wireless circuitry may rely on transistors based on wide bandgap semiconductors, such as GaN and SiC, that are expected to operate through 600˚ C [3]. One possible substrate for SiC and GaN transistors and circuits is high purity 4-H SiC, which has been shown to be a good, low loss substrate at microwave frequencies through 500˚ C [4], [5]. However, most GaN and SiC transistors have been built on 6-H SiC, and microwave frequency transmission lines on 6-H SiC have been shown to have a very high attenuation constant at high temperatures [6].…”

“…One possible substrate for SiC and GaN transistors and circuits is high purity 4-H SiC, which has been shown to be a good, low loss substrate at microwave frequencies through 500˚ C [4], [5]. However, most GaN and SiC transistors have been built on 6-H SiC, and microwave frequency transmission lines on 6-H SiC have been shown to have a very high attenuation constant at high temperatures [6]. GaN transistors may also be fabricated on Sapphire, and GaN contacts on Sapphire have been characterized through 500˚ C [7].…”

Characteristics of coplanar waveguide on sapphire for high temperature applications (25 to 400° C)

“…GaN and SiC transistors and circuits are often monolithically fabricated on SiC substrates. Microwave components on high purity 4-H SiC have been shown to have low loss through 500˚ C [4], [5], but most GaN and SiC transistors are fabricated on 6-H SiC, which has been shown to introduce very high loss in microwave transmission lines at elevated temperatures [6]. An alternative substrate for GaN and SiC transistors and circuits is Sapphire, and some research has been reported on GaN contacts formed on an r-plane Sapphire substrate operating 500˚ C [7].…”

Performance degradation of some on‐chip finite‐ground coplanar waveguide (FGCPW)‐built passive devices at high temperature

“…The measured propagation characteristics of FGCPWs on semiinsulating 4H-SiC through 540°C and 800°C were shown in [9] and [10], respectively, and the temperature-dependent features of ␣(f, T) was described by:…”