MD simulation of ion implantation damage in AlGaAs: II. Generation of point defects

Nonlinear compositional and morphological evolution of ion irradiated GaSb prior to nanostructure formation

“…Atomistic computational models are not limited to a particular set of assumptions as continuum models are and are therefore able to consider all possible mechanisms without bias. These simulations can provide critical information about the prompt ion effects in ion-irradiated III-V materials, including preferential sputtering 15 , surface mass redistribution 16 , ion-induced defect production 17 and accumulation 18 , and structural transformations 19 . Many of these mechanisms, notably the defect dynamics and structural transformations, have not been considered by any existing models of III-V nanopatterning, and their potential influence on the emergence of an altered compositional layer at the surface remains unclear at best.…”