MBN explorer atomistic simulations of 855 MeV electron propagation and radiation emission in oriented silicon bent crystal: theory versus experiment

Abstract

The method of relativistic molecular dynamics is applied for accurate computational modeling and numerical analysis of the channelling phenomena for 855 MeV electrons in bent oriented silicon (111) crystal. Special attention is devoted to the transition from the axial channelling regime to the planar one in the course of the crystal rotation with respect to the incident beam. Distribution in the deflection angle of electrons and spectral distribution of the radiation emitted are analyzed in detail. The results of calculations are compared with the experimental data collected at the MAinzer MIctrotron facility.

Beam steering with quasi-mosaic bent silicon single crystals: computer simulations for 855 MeV and 6.3 GeV electrons and comparison with experiments

“…Nearly perfect agreement with the experimental observation was found for both, alignments of the crystal into the channeling regime (ψ 0 = 0), and for the volume capture situation (ψ 0 = 450 μrad). A detailed analysis of the same experiment was performed by Haurylavets et al [19] an the basis of the MBN explorer software package under various sophisticated assumptions. Results are shown in Fig.…”

Beam steering with quasi-mosaic bent silicon single crystals -- Computer simulations for 855 MeV and 6.3 GeV electrons and comparison with experiments

“…Nearly perfect agreement with the experimental observation was found for both, alignments of the crystal into the channeling regime (ψ 0 = 0), and for the volume capture situation (ψ 0 = 450 µrad). A detailed analysis of the same experiment was performed by Haurylavets et al [19] an the basis of the MBN explorer software package under various sophisticated assumptions. Results are shown in Fig.…”