Beam steering with quasi-mosaic bent silicon single crystals -- Computer simulations for 855 MeV and 6.3 GeV electrons and comparison with experiments

Abstract

Monte Carlo simulations have been performed for 855 MeV and 6.3 GeV electrons channeling in silicon single crystals at circular bent (111) planes. The aim was to identify critical experimental parameters which effect the volume-deflection and volume-capture characteristics. To these belongs the angular alignment of the crystal with respect to the nominal beam direction. The continuum potential picture has been utilized. The simulation results were compared with experiments. It turns out that the assumption of an anticlastic bending of the crystal, bent on the principle of the quasimosaic effect, is not required to reproduce the experimental observations.