MBE lanthanum-based high-k gate dielectrics as candidates for SiO2 gate oxide replacement

Vellianitis, G.; Αποστολόπουλος, Γ.; Mavrou, G.; Argyropoulos, K.; Dimoulas, A.; Hooker, Jacob C.; Conard, Thierry; Butcher, M.

doi:10.1016/j.mseb.2003.10.052

Cited by 37 publications

(21 citation statements)

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“…Additionally, developments in high-k dielectrics allow for greater use of Si 1−x Ge x . 7 As the aggressive scaling of modern devices will soon lead to devices with characteristic dimensions of only a few nanometers, the understanding of atomic diffusion and the stability of related complexes is becoming increasingly important in group IV semiconductors. [8][9][10][11][12] The most fundamental process of matter transport in Si 1−x Ge x is self-diffusion, which has been studied by both experimental [13][14][15][16][17][18][19][20] and theoretical 21,22 methods.…”

Section: Introductionmentioning

confidence: 99%

Nonlinear stability ofEcenters inSi1−xGex: Electronic structure calculations

et al. 2008

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Electronic structure calculations are used to investigate the binding energies of defect pairs composed of lattice vacancies and phosphorus or arsenic atoms ͑E centers͒ in silicon-germanium alloys. To describe the local environment surrounding the E center we have generated special quasirandom structures that represent random silicon-germanium alloys. It is predicted that the stability of E centers does not vary linearly with the composition of the silicon-germanium alloy. Interestingly, we predict that the nonlinear behavior does not depend on the donor atom of the E center but only on the host lattice. The impact on diffusion properties is discussed in view of recent experimental and theoretical results.

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Section: Introductionmentioning

confidence: 99%

Nonlinear stability ofEcenters inSi1−xGex: Electronic structure calculations

et al. 2008

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“…[7,8] The performance of La 2 O 3 dielectrics appeared to be rather unstable, compared to HfO 2 , when La 2 O 3 and HfO 2 were synthesized and examined under similar reactor conditions. [4] Lanthanum is also used as a component of mixed oxides, solid solutions, or binary phases, and is often mixed with alumina, forming mainly amorphous materials [9][10][11] with target stoichiometry corresponding to LaAlO 3 . In the crystalline form, LaAlO 3 is a layered, perovskite-type structure with alternate Al-O 2 and La-O layers comprising the lattice units.…”

Section: Introductionmentioning

confidence: 99%

“…[26] The reactivity of LaAlO 3 on silicon has also been studied. [2,11] LaAlO 3 on Si may remain amorphous even after annealing. [22] The equivalent oxide thicknesses achieved with LaAlO 3 have been as low as 0.9-1.1 nm.…”

Section: Introductionmentioning

confidence: 99%

“…[22] The equivalent oxide thicknesses achieved with LaAlO 3 have been as low as 0.9-1.1 nm. [11,27] LaAlO 3 films can be processed by various techniques, such as molecular-beam epitaxy (MBE), [11,24,26,28] pulsed laser deposition, [27,29] magnetron sputtering, [15] or using 158 chemical methods such as alkoxide-based sol-gel chemistry, [16] thermolysis of hydrated nitrates, [18,23] gelation-precipitation techniques, [30] or metal-organic (MO) CVD. [8,[31][32][33] More recently, atomic layer deposition (ALD) has been examined as a low-temperature growth technique for synthesizing La 2 O 3 and LaAlO 3 films [1,4,7,[34][35][36] The lanthanum b-diketonate La(thd) 3 (thd = 2,2,6,6-tetramethyl-3,5 heptanedione) has been examined as a lanthanum precursor, [7,35] with ozone as an oxygen precursor, resulting in the growth of cubic La 2 O 3 at 300-350°C and higher temperatures.…”

Section: Introductionmentioning

confidence: 99%

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Atomic Layer Deposition and Properties of Lanthanum Oxide and Lanthanum‐Aluminum Oxide Films

Kukli

Ritala

Pore

et al. 2006

Chemical Vapor Deposition

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Atomic layer deposition (ALD) of lanthanum oxide on glass and silicon substrates was examined using lanthanum silylamide, La[N(SiMe 3 ) 2 ] 3 , and water as precursors in the substrate temperature range of 150-250°C. The effect of pulse times and precursor evaporation temperature on the growth rate and refractive index was investigated. The films remained amorphous regardless of the deposition conditions. The resulting La 2 O 3 films contained noticeable amounts of hydrogen and silicon and were chemically unstable while stored in ambient air. Lanthanum aluminum oxide films were achieved with stoichiometry close to that of LaAlO 3 at 225°C from La[N(SiMe 3 ) 2 ] 3 , Al(CH 3 ) 3 , and H 2 O. The lanthanum b-diketonate precursor, La(thd) 3 , was used as the reference precursor.

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“…Lanthanum-based complex oxides such as perovskite-like LaAlO 3 and pyrochlore La 2 Hf 2 O 7 have also been considered for such applications (Vellianitis G et al, 2004). Silicon technology has been the primary driver for transition from micro to nano scale.…”

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confidence: 99%

Editorial

Ravindra¹

2012

Emerging Materials Research

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Materials Research is constantly evolving and correlations between process, structure, properties and performance which are application specifi c require expert understanding at the macro, micro and nanoscale. The ability to intelligently manipulate material properties and tailor them for desired applications is of constant interest and challenge within universities, national laboratories and industries.We are excited to launch Emerging Materials Research (EMR), which is dedicated to all aspects of materials science and engineering. The constant evolution in materials in the form of bulk, thin fi lms, coatings, multilayers, devices and structures have been phenomenal. Much of the research has focused on fi nding new methods to make materials more useful in areas including energy conversion, electronics, pharmaceuticals, aerospace, defense, transportation and the health related industry.There are a number of specialized journals that cater to the study of materials science and engineering. However, the growth and broad scope of the subject, together with the enormous impact of research in materials science makes it possible for several new and existing publications to cater to the expanding and interdisciplinary audience. The objective of this journal is to provide a forum to stimulate new ideas, present and discuss fundamental and applied research, identify critical problems, provide promising solutions and assess possible roadmaps for future trends.Materials in the form of semiconductors, superconductors, biomaterials, ceramics, ferroelectrics, coatings, thin fi lms, polymers and related organic materials continue to be an innovative area in fundamental materials research and applications. As part of our commitment to materials science and engineering, EMR will aim to publish a combination of short communications, research and review articles, in its every bimonthly edition. The review article will alternate between electronic materials, bio materials, magnetic materials and optical or structural materials. This will permit the readers to be presented with an overview of the state-of-the-art in a multitude of aspects of research and development in materials science and engineering.In recent weeks, there have been several breakthroughs in materials science. For example, an international team, led by scientists from University of Oxford and Trinity College Dublin, has invented a versatile method for creating one-atom thick 'nanosheets' from a variety of materials utilizing mild ultrasonic pulses (http://www. ox.ac.uk/media/news_stories/2011/110204.html and Figure 1).It is anticipated that these new materials will have chemical and electronic properties which are well suited for applications in novel electronic devices, super-strong composite materials and energy generation and storage. In particular, this research represents a major breakthrough towards the development of effi cient thermoelectric materials. In addition, nanosheets created by this method can be sprayed onto the surface of other semiconductor mate...

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MBE lanthanum-based high-k gate dielectrics as candidates for SiO2 gate oxide replacement

Cited by 37 publications

References 9 publications

Nonlinear stability ofEcenters inSi1−xGex: Electronic structure calculations

Nonlinear stability ofEcenters inSi1−xGex: Electronic structure calculations

Atomic Layer Deposition and Properties of Lanthanum Oxide and Lanthanum‐Aluminum Oxide Films

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