MBE growth of monolithic MgZnSSe/ZnSSe/CdZnSe microcavity led structures

Controlled growth of exciton–polariton microcavities using in situ spectral reflectivity measurements

“…The method is based on continuous spectral reflectivity measurements during the growth and fulfills the required precision to monitor and control the growth of exactly tuned exciton-polariton structures. Contrary to this spectroscopic method, the most commonly applied technique of in situ reflectivity measurements is based on time-resolved recording of the reflectivity of a growing sample at a single fixed or tunable wavelength [7][8][9]16]. These measurement curves typically exhibit Fabry-Pé rot oscillations, which can be used to extract the growth rate.…”

Molecular-beam-epitaxy-grown ZnSe/ZnTe high-reflectivity distributed Bragg reflectors

“…This monolithic method has several advantages over the former, such as cost reduction by elimination of the external procedures and the ability to lithographically process devices of special design (such as microcavity lasers with small lateral dimensions [7]) from the original single monolithic structure. Although there has been extensive research on monolithic III-V semiconductor microcavities, due to the growth difficulties only very few studies have been reported on monolithic microcavities using II-VI semiconductor materials [8,9].…”