Controlled growth of exciton–polariton microcavities using in situ spectral reflectivity measurements

Biermann, K.; Cerda‐Méndez, E. A.; Höricke, M.; Santos, P. V.; Hey, R.

doi:10.1016/j.jcrysgro.2010.10.107

Cited by 9 publications

(6 citation statements)

References 16 publications

(21 reference statements)

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“…Although the performance data are shown for a FP laser, which usually emits in a multi-mode regime, we have demonstrated that similar single-mode cw output-power levels can be obtained for SP QCLs in combination with a lateral DFB grating of first order [23]. We attribute the slightly improved performance of the employed active region design with respect to our previously reported results [20] to a combination of improved growth conditions, such as in-situ growth rate control [24], and a slightly increased Al content in the barriers.…”

Section: Resultssupporting

confidence: 65%

High-temperature, continuous-wave operation of terahertz quantum-cascade lasers with metal-metal waveguides and third-order distributed feedback

Wienold¹,

Röben²,

Schrottke³

et al. 2014

Opt. Express

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Currently, different competing waveguide and resonator concepts exist for terahertz quantum-cascade lasers (THz QCLs). We examine the continuous-wave (cw) performance of THz QCLs with single-plasmon (SP) and metal-metal (MM) waveguides fabricated from the same wafer. While SP QCLs are superior in terms of output power, the maximum operating temperature for MM QCLs is typically much higher. For SP QCLs, we observed cw operation up to 73 K as compared to 129 K for narrow (≤ 15 μm) MM QCLs. In the latter case, single-mode operation and a narrow beam profile were achieved by applying third-order distributed-feedback gratings and contact pads which are optically insulated from the intended resonators. We present a quantitative analytic model for the beam profile, which is based on experimentally accessible parameters.

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Section: Resultssupporting

confidence: 65%

High-temperature, continuous-wave operation of terahertz quantum-cascade lasers with metal-metal waveguides and third-order distributed feedback

Wienold¹,

Röben²,

Schrottke³

et al. 2014

Opt. Express

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“…A detailed description of the growth procedure can be found in Ref. [15]. Figure 1 shows microreflectance (μ-R) spectra of the MC measured at different positions along the straight line on the sample surface shown in Fig.…”

Section: Experimental Setup and Sample Descriptionmentioning

confidence: 99%

Microscopic optical anisotropy of exciton-polaritons in a GaAs-based semiconductor microcavity

et al. 2017

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Exciton-polaritons in semiconductor microcavities are ideal for the study of the exciton-light interaction and its dependence on light polarization. In this work, we report on the optical response and the dependence on polarization of a polariton microcavity using microreflectance anisotropy spectroscopy (μ-RAS) with a spatial resolution of 10.0 × 10.0 μm 2. We have found that, in contrast to optical reflection, the μ-RAS spectra are quite inhomogeneous along the microcavity surface. We demonstrate the existence of microscopic local domains with differences in optical anisotropy of up to 20% within 100 μm. These variations are independent of the detuning between the optical and excitonic resonances, which in our sample is close to 0 meV. The μ-RAS line shape can be understood by using a model based on the anisotropic strain fields induced at the interfaces of the microcavity. The model agrees quite well with the experimental results and allows us to quantify the split of the energy levels of the exciton-polariton branches induced by the local break of symmetry at the microcavity interfaces.

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“…In such cases, all

λ / 4

layers of thick mirror layers were grown as short‐period‐super‐lattices (SPSLs), as it has been shown that the numerous interfaces of SPSLs hinders the propagation of misfit dislocation through the epilayers (). The matching of microcavity resonance wavelength and QW emission wavelength was ensured by applying in situ continuous spectral reflectivity measurements ().…”

Section: Epitaxial Growth Of Gaas(110) and Gaas(111)b Quantum Wellsmentioning

confidence: 99%

Spin transport and spin manipulation in GaAs (110) and (111) quantum wells

Hernández-Mínguez

Biermann

Hey

et al. 2014

Physica Status Solidi (b)

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This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.Spin dephasing via the spin-orbit interaction is a major mechanism limiting the electron spin lifetime in zincblende III-V quantum wells (QWs). QWs grown along the non-conventional crystallographic directions [111] and [110] offer new interesting perspectives for the control of spin-orbit (SO) related spin dephasing mechanisms due to the special symmetries of the SO fields in these structures. In this contribution, we show that the combination of such special symmetries with the transport of carriers by the type II modulation accompanying a surface acoustic wave allows the transport of spin polarized carriers over distances of tens of μm in GaAs(110) QWs. In the case of GaAs(111), the Rashba contribution to the SO field generated by an electric field perpendicular to the QW plane is used to compensate the Dresselhaus contribution at low temperatures, leading to spin lifetimes of up to 100 ns. The compensation mechanism is less effective at high temperatures due to nonlinear terms of the Dresselhaus contribution. Perspectives to overcome this limitation via the combination of (111) structures with the transport of spins by surface acoustic waves are discussed.

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Controlled growth of exciton–polariton microcavities using in situ spectral reflectivity measurements

Cited by 9 publications

References 16 publications

High-temperature, continuous-wave operation of terahertz quantum-cascade lasers with metal-metal waveguides and third-order distributed feedback

High-temperature, continuous-wave operation of terahertz quantum-cascade lasers with metal-metal waveguides and third-order distributed feedback

Microscopic optical anisotropy of exciton-polaritons in a GaAs-based semiconductor microcavity

Spin transport and spin manipulation in GaAs (110) and (111) quantum wells

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