MBE growth of MnGeP2 thin films

Magnetic properties of manganese germanium diphosphide and manganese phosphide grown by molecular beam epitaxy technique

“…MnCePz and MnP were grown using MBE technique on GaAs (001) substrates, details of the technique having been described elsewhere [2]. The Ge-buffer layer was deposited on GaAs (001) substrate at 380"C, followed by groyth of MnCePz and MnP at 435°C.…”

“…We have been investigating chalcopyrite-based room temperature ferromagnetic semiconductors Zn].,Mn,GeP2 and Cdl-,Mn,GePz [I]. In the previous study, we succeeded in preparation of MnGePa (x=l in 111.,Mn,GeP2 series) films on GaAs and InP substrates using molecular beam epitaxy (MBE) [2]. Magnetic studies revealcd that the MnGePz film also shows room temperature ferromagnetism with Tc=320K [3].…”