MBE Growth of MCT on GaAs Substrates at AIM

Wenisch, J.; Eich, D.; Lutz, H.; Schallenberg, T.; Wollrab, R.; Ziegler, Johann

doi:10.1007/s11664-012-2113-7

Cited by 18 publications

(13 citation statements)

References 11 publications

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“…Despite these local areas of focus, there was also a great range of research on individualized topics [56,57]. Further research was performed on multicolor detectors, focusing on moving into the MWIR and LWIR regimes utilizing multiple absorbing layers [58].…”

Section: Bulk Detectorsmentioning

confidence: 99%

Progress in Infrared Photodetectors Since 2000

Downs

Vandervelde

2013

Sensors

223

110

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The first decade of the 21st-century has seen a rapid development in infrared photodetector technology. At the end of the last millennium there were two dominant IR systems, InSb- and HgCdTe-based detectors, which were well developed and available in commercial systems. While these two systems saw improvements over the last twelve years, their change has not nearly been as marked as that of the quantum-based detectors (i.e., QWIPs, QDIPs, DWELL-IPs, and SLS-based photodetectors). In this paper, we review the progress made in all of these systems over the last decade plus, compare the relative merits of the systems as they stand now, and discuss where some of the leading research groups in these fields are going to take these technologies in the years to come.

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Section: Bulk Detectorsmentioning

confidence: 99%

Progress in Infrared Photodetectors Since 2000

Downs

Vandervelde

2013

Sensors

223

110

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“…The other track relies on molecular beam epitaxy (MBE) using 4-inch GaAs substrates [2,3]. The HOT-detectors considered here are LPE-based.…”

Section: Technological Aspectsmentioning

confidence: 99%

Recent progress in the development of MCT hot detectors

Wollrab

Schirmacher

Schallenberg

et al. 2017

International Conference on Space Optics — ICSO 2014

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To push HOT-performance, AIMs existing n-on-p technology has been improved by introducing Gold as an acceptor and reducing its concentration to the lower 10 15 /cm 3 range as well as by optimizing the passivation process. This results in a substantial reduction in dark current density, a prerequisite for HOT operation. Recent dark current data are compared to ones previously obtained as well as to Tennant`s Rule07 [1], a generally accepted bench mark in this context. Furthermore, we present electro-optical parameters obtained in the temperature range from 120 K to 170 K on resulting FPAs with 640x512 pixels, a pitch of 15 μm and a typical (80 K) cutoff wavelength of 5.1 μm.

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“…For the growth process, GaAs substrates with (211)B orientation and a diameter of 100 mm are used. The continuous advance in process development since early 2010 has been documented in several previous publications [2][3][4][5][6].…”

Section: Mbe Growth Processmentioning

confidence: 99%

“…Over the course of the last years, rapid progress in the performance of MBE-grown material has been achieved at AIM [2][3][4][5][6]. In parallel, efforts continue to improve traditional LPE-grown material on CdZnTe substrates, especially with respect to HOT applications.…”

Section: Mwir Mctmentioning

confidence: 99%

MCT by MBE on GaAs at AIM: state of the art and roadmap

et al. 2015

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In multiple publications over the last years, MCT MBE on GaAs has been shown to be a very versatile and promising material system and indeed may be the prime candidate among the alternative substrates for the fabrication of highperformance detectors across the whole IR composition range. In this paper we report on successful growth of MCT on GaAs over the composition range 0.2 < x(Cd) < 0.8. A single color MWIR 640 x 512, 15 µm pitch detector fabricated from this material with an operability of 99.71% at an operating temperature of 120 K is presented. In the LWIR region, an operability of 99.48% at 65 K has been achieved with a 1280 x 1024, 15 µm pitch detector. Finally we report on preliminary results of a dual-color 640 x 512, 20 µm pitch detector with cutoff wavelengths in the 3 -4 and 4 -5 µm range.

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MBE Growth of MCT on GaAs Substrates at AIM

Cited by 18 publications

References 11 publications

Progress in Infrared Photodetectors Since 2000

Progress in Infrared Photodetectors Since 2000

Recent progress in the development of MCT hot detectors

MCT by MBE on GaAs at AIM: state of the art and roadmap

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