MBE Growth of (In)GaN for LED Applications

Riechert, H.; Averbeck, R.; Graber, A.; Schienle, M.; Strauβ, U.; Tews, H.

doi:10.1557/proc-449-149

Cited by 97 publications

(46 citation statements)

References 14 publications

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“…As has been previously observed [2][3][4], the RHEED image abruptly changes from spotty to streaky as flux conditions move from nitrogen-rich to gallium-rich. The surface morphology of films grown on GaN buffer layers and under various flux conditions is shown in Figure 1.…”

Section: Gan Buffer Layerssupporting

confidence: 72%

Effect of Buffer Layer and III/V Ratio on the Surface Morphology of Gan Grown by MBE

et al. 1998

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The surface morphology of GaN is observed by atomic force microscopy for growth on GaN and AlN buffer layers and as a function of III/V flux ratio. Films are grown on sapphire substrates by molecular beam epitaxy using a radio frequency nitrogen plasma source. Growth using GaN buffer layers leads to N-polar films, with surfaces strongly dependent on the flux conditions used. Flat surfaces can be obtained by growing as Ga-rich as possible, although Ga droplets tend to form. Ga-polar films can be grown on AlN buffer layers, with the surface morphology determined by the conditions of buffer layer deposition as well as the III/V ratio for growth of the GaN layer. Near-stoichiometric buffer layer growth conditions appear to support the flattest surfaces in this case. Three defect types are typically observed in GaN films on AlN buffers, including large and small pits and "loop" defects. It is possible to produce surfaces free from large pit defects by growing thicker films under more Ga-rich conditions. In such cases the surface roughness can be reduced to less than 1 nm RMS.

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Section: Gan Buffer Layerssupporting

confidence: 72%

Effect of Buffer Layer and III/V Ratio on the Surface Morphology of Gan Grown by MBE

et al. 1998

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“…Second, the calculated growth rates of ternary compounds GaInN differs significantly from that measured in Ref. [33], even under a very wide variation of the growth parameters. The origin of this inconsistency may be attributed to a possible occurrence of decomposition of InN into the liquid and vapor phases during the experiments of Ref.…”

Section: Footnotesmentioning

confidence: 55%

The role of gaseous species in group-III nitride growth

Karpov¹,

Makarov

Ramm

1997

MRS Internet j. nitride semicond. res.

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A quasi-thermodynamic model accounting for kinetics of molecular nitrogen evaporation is applied to simulate the growth of binary and ternary group-III nitrides using atomic group-III elements and molecular ammonia as the sources. The values of the molecular nitrogen evaporation coefficients from the surface of GaN and AlN necessary for the simulation are extracted from experiments on free evaporation of the crystals in vacuum, while for InN only estimates are available. The growth process of AlN and InN is studied by analyzing the composition of the desorbed vapor species that are thought to influence the native defect formation in group-III nitrides. Different channels of desorption from the surfaces of group-III nitrides (related either to group-III atoms or to their hydrides) are compared. Specific features of the growth processes under the metal-rich and N-rich conditions are analyzed. The developed approach is extended to study the growth of the ternary compounds GaInN and AlGaN. The growth rate of ternary compounds versus temperature shows a two-drop behavior corresponding to the rapid increase of the respective group-III atom desorption. The effect is accompanied by a corresponding stepwise change in the solid phase composition. Factors retarding the growth of ternary compounds -the miscibility gap related to internal strain accumulated in the solid phase due to the lattice mismatch of binary constituents, and the extra liquid phase formation during growth -are discussed with respect to GaInN.

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“…The breakthrough in the study of growth kinetics in PAMBE came with the finding that, in Ga-rich conditions, it is possible to grow relatively smooth layers at low growth temperatures [7,[10][11][12][13][14]16]. However, such growth conditions were prone to the formation of Ga droplets on the GaN surface and high-quality material was mainly formed in the regions between the droplets.…”

Section: Growth Conditions For Pambementioning

confidence: 99%

“…In the more widely employed plasma-assisted MBE (PAMBE) [5], purified nitrogen gas is activated using an RF-plasma and supplied to the growth surface at typical flow rates of 1-2 sccm. Early experimental results [7] showed that unlike ammonia MBE, PAMBE requires group III-rich conditions to achieve good material quality. Much progress has been made in both theoretical [8,9] and experimental [10][11][12][13] understanding of the growth kinetics for such metal-rich conditions.…”

Section: Introductionmentioning

confidence: 99%

Nitride-based laser diodes by plasma-assisted MBE—From violet to green emission

Skierbiszewski

Wasilewski

Grzegory

et al. 2009

Journal of Crystal Growth

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Nitride-based laser diodes by plasma-assisted MBE-From violet to green emission Skierbiszewski, C.; Wasilewski, Z.R.; Grzegory, I.; Porowski, S.Contact us / Contactez nous: nparc.cisti@nrc-cnrc.gc.ca. We present recent progress in growth of nitride-based laser diodes (LDs) and efficient light-emitting diodes (LEDs) made by plasma-assisted MBE (PAMBE). This technology is ammonia free, and nitrogen for growth is activated by RF plasma source from nitrogen molecules. The recent demonstration of CW blue InGaN LDs has opened a new perspective for PAMBE in optoelectronics. The LDs were fabricated on low threading dislocation density (TDD) bulk GaN substrates at low growth temperatures 600-700 1C.In this work, we describe the nitride growth fundamentals, the influence of the TDD on the layer morphology, the peculiarities of InGaN growth as well as properties of LEDs and LDs made by PAMBE.

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MBE Growth of (In)GaN for LED Applications

Cited by 97 publications

References 14 publications

Effect of Buffer Layer and III/V Ratio on the Surface Morphology of Gan Grown by MBE

Effect of Buffer Layer and III/V Ratio on the Surface Morphology of Gan Grown by MBE

The role of gaseous species in group-III nitride growth

Nitride-based laser diodes by plasma-assisted MBE—From violet to green emission

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