MBE-grown ZnSSe thin films on ITO substrates for liquid-crystal light valve applications

Opto-Electronic Properties of MBE-Grown ZnSSe Thin Films on ITO Substrates

“…In our previous studies of the structural properties of ZnSSe thin films [3], it was found that sample 2, which was grown at a substrate temperature of 290 • C, offered the largest crystal size as determined by X-ray diffractometry, the smallest surface roughness as determined by atomic force microscopy, and the best columnar structure as observed by transmission electron spectroscopy. The Se composition and crystal size of these five samples are listed in Table 1.…”

“…The growths of ZnSSe thin films were carried out using a ZnS compound source and a Se elemental source. The five samples studied in this work were grown at substrate temperatures from 270 • to 330 • C. More detailed information about the growth conditions can be found elsewhere [3]. The photocurrent responsivity measurements were carried out on a set of Au arrays with an area of 0.03 mm 2 and thickness of 100 Å as the top transparent electrode.…”

“…By combining the idea of using ZnSSe thin films as the photoconductive layer with LCLV technology, a novel visible-blind ultraviolet imaging device can be realized. The authors have recently reported the MBE growth and various structural characterizations of ZnSSe thin films grown on indium-tin-oxide (ITO) substrates [3]. In this work, we focus on the studies of a number of their opto-electronic characteristics.…”