MBE grown high κ dielectrics Ga2O3(Gd2O3) on GaN

High κ dielectric single-crystal monoclinic Gd2O3 on GaN with excellent thermal, structural, and electrical properties

“…The relatively low electrical leakage current density of RTA 1100 1C demonstrates a refined single-crystal oxide Gd 2 O 3 film with high thermal stability. The asymmetrical J-E curves feature was also observed in other GaN MOS capacitor case, which is due to the low minority carrier concentration in GaN [4,5].…”

“…With sweeping bias voltage at 100 kHz, the hysteresis is about 250 mV. The dielectric constant of Gd 2 O 3 was calculated to be about 17, which is higher than that of the amorphous GGO on GaN [5].…”

“…HfO 2 ) [3][4][5][6] and single-crystal (Gd 2 O 3 , Sc 2 O 3 ) [7,8] high k dielectrics on GaN with low interfacial densities of states (D it ) and low electrical leakage currents, essential in fabricating inversion-channel devices, have received research interest recently. Annealing at very high temperature of at least 1100 1C is needed to activate source/drain implanted ions for ohmic contacts in fabricating inversion-channel GaN MOS field-effect-transistors (MOSFET's) [9,10].…”

“…Electrical characteristics were measured from MOS capacitors, with the detailed fabrication and measurement given earlier [5,6].…”

Comparison of gadolinium oxide trapping layers in flash memory applications

“…Recently, Gadolinium oxide materials such as Gd 2 O 3 have been used as high-k charge trapping layers due to their high dielectric constant (k~18), wide band gap (5.8e6.4 eV), large conduction band offset (2.21 eV), and stability at high temperature [5e9]. Nano-crystalline (NC) particles of Gd 2 O 3 embedded in silica glass have been used as memory devices, including crystallized Gd 2 O 3 -NC memory comprised of a Gd 2 O 3 nano-dot surrounded by amorphous Gd 2 O 3 dielectrics [10,11]. Current research shows Gd 2 O 3 to be one of the most promising alternative metal oxides for use in flash memory applications.…”