Maximum Temperature Detection System for Integrated Circuits

Abstract

The paper describes structure and measurement results of the system detecting present maximum temperature on the surface of an integrated circuit. The system consists of the set of proportional to absolute temperature sensors, temperature processing path and a digital part designed in VHDL. Analogue parts of the circuit where designed with full-custom technique. The system is a part of temperature-controlled oscillator circuit - a power management system based on dynamic frequency scaling method. The oscillator cooperates with microprocessor dedicated for thermal experiments. The whole system is implemented in UMC CMOS 0.18 μm (1.8 V) technology.

Analysis and Verification of Integrated Circuit Thermal Parameters

“…Additional power can be dissipated in the chip after switching on P diss , what will cause change of chip temperature described by (1). Presented structure behaves as an inertial circuit.…”

“…Presented structure behaves as an inertial circuit. Pulse change of dissipated power will not cause immediate result but the temperature will rise as exponential function according to (2), where  is thermal time constant of the integrated circuit and t is time elapsed from the start of pulse change of power dissipation [1].…”