Maximizing the Performance of 650-V p-GaN Gate HEMTs: Dynamic RON Characterization and Circuit Design Considerations

Wang, Hanxing; Wei, Jin; Xie, Ruiqing; Liu, Cheng; Tang, Gaofei; Chen, Kevin J.

doi:10.1109/tpel.2016.2610460

Cited by 215 publications

(94 citation statements)

References 24 publications

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“…The combination of GaN channel thickness and buffer layer material properties and dimensions have to be optimized accordingly. normally rely on compensated (in many cases C-doped) buffer structures often in combination with ternary AlGaN layers [34][35][36]. The dynamic RON data for 400-600 V switching of p-GaN gate HFETs (Figure 6) are competitive to values achieved with normally-on HFETs using MIS or Schottky-type gate modules [22,24].…”

Section: Normally-off Transistors With P-gan Gate: Technology and Permentioning

confidence: 99%

“…The p-GaN technology already provided some impressive device results and could demonstrate safe and practically dispersion-free device operation up to 650 V. Similar to MIS-type and Schottkytype GaN HFETs, p-GaN HFETs of the 600-650 V class have demonstrated very low capacitances, gate charge and area-specific on-state resistances and outperform Si-based superjunction MOSFETs [24,34]. GaN power switching transistors showing significantly reduced dynamic on-state resistance normally rely on compensated (in many cases C-doped) buffer structures often in combination with ternary AlGaN layers [34][35][36]. The dynamic RON data for 400-600 V switching of p-GaN gate HFETs ( Figure 6) are competitive to values achieved with normally-on HFETs using MIS or Schottky-type gate modules [22,24].…”

Section: Normally-off Transistors With P-gan Gate: Technology and Permentioning

confidence: 99%

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Technology and Reliability of Normally-Off GaN HEMTs with p-Type Gate

et al. 2017

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Abstract:GaN-based transistors with p-GaN gate are commonly accepted as promising devices for application in power converters, thanks to the positive and stable threshold voltage, the low on-resistance and the high breakdown field. This paper reviews the most recent results on the technology and reliability of these devices by presenting original data. The first part of the paper describes the technological issues related to the development of a p-GaN gate, and the most promising solutions for minimizing the gate leakage current. In the second part of the paper, we describe the most relevant mechanisms that limit the dynamic performance and the reliability of GaN-based normally-off transistors. More specifically, we discuss the following aspects: (i) the trapping effects specific for the p-GaN gate; (ii) the time-dependent breakdown of the p-GaN gate during positive gate stress and the related physics of failure; (iii) the stability of the electrical parameters during operation at high drain voltages. The results presented within this paper provide information on the current status of the performance and reliability of GaN-based E-mode transistors, and on the related technological issues.

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Section: Normally-off Transistors With P-gan Gate: Technology and Permentioning

confidence: 99%

Section: Normally-off Transistors With P-gan Gate: Technology and Permentioning

confidence: 99%

Technology and Reliability of Normally-Off GaN HEMTs with p-Type Gate

et al. 2017

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“…GaN HEMT is widely considered as a promising candidate for the next generation of power transistor [1]. Compared with Silicon MOSFET, GaN HEMT has a higher semiconductor band gap, which leads to lower onresistance, lower leakage current and higher operating temperature [2][3][4][5]. All these salient features enable the GaN HEMT's application in high frequency power conversion.…”

Section: Introductionmentioning

confidence: 99%

Review of Resonant Gate Driver in Power Conversion

Sun

Zhang

Andersen

2018

2018 International Power Electronics Conference (IPEC-Niigata 2018 -ECCE Asia)

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Resonant gate driver is a vital trend of research topic along with the development of high electron mobility transistor (HEMT). Compared with conventional gate driver, resonant gate driver achieves much lower power dissipation during switching transient and widely viewed as one essential technique for high frequency power conversion. This paper provides a state-of-art review and thorough comparison of different resonant gate driver topologies. Case study of two representative topologies is carried out. Application of resonant gate driver in Gallium Nitride (GaN) HEMT is discussed.

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“…The increase in on-state resistance is highest immediately after the device is turned on and it returns to the rated resistance value after a certain time period. The magnitude and time constant of the increase has been shown to be dependent on both device design and operational parameters [2], [3], [4], [5].…”

Section: Introductionmentioning

confidence: 99%

“…The dynamic R DS,on adds a loss component which currently is not accounted for during the design phase. There are several authors who have investigated the phenomenon with operation parameters close to that in actual application [2], [3], [4], [5], [6], [7], [8]. Examples of operation parameters include bias voltage, device blocking time, current, and temperature variation.…”

Section: Introductionmentioning

confidence: 99%

Modelling and quantification of power losses due to dynamic on-state resistance of GaN E-mode HEMT

Spro

Peftitsis

Midtgård

et al. 2017

2017 IEEE 18th Workshop on Control and Modeling for Power Electronics (COMPEL)

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Abstract-This paper investigates a method for quantifying the additional losses in high-voltage GaN enhancement mode HEMTs (eHEMT) employed in converter applications. The additional losses stem from the phenomenon known as current collapse or dynamic on-state resistance. The goal of this work is to investigate how these losses contribute to the total power loss in converter application. Measurement and modelling methods in the literature are reviewed. Changes to the measurement circuit are made to improve measurement accuracy. Measurements of dynamic on-state resistance are made on a commercial GaN eHEMT. The experimental results shows that the resistance depends on both dc-link voltage and blocking time. The resistance waveform and initial attempts at modelling the dynamic onstate resistance indicate that the suggested model is suitable for modelling the losses in LTSPICE software.

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Maximizing the Performance of 650-V p-GaN Gate HEMTs: Dynamic RON Characterization and Circuit Design Considerations

Cited by 215 publications

References 24 publications

Technology and Reliability of Normally-Off GaN HEMTs with p-Type Gate

Technology and Reliability of Normally-Off GaN HEMTs with p-Type Gate

Review of Resonant Gate Driver in Power Conversion

Modelling and quantification of power losses due to dynamic on-state resistance of GaN E-mode HEMT

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