Materials science issues related to the fabrication of highly doped junctions by laser annealing of Group IV semiconductors

Duffy, Ray; Napolitani, E.; Cristiano, Fuccio

doi:10.1016/b978-0-12-820255-5.00007-6

Laser Annealing Processes in Semiconductor Technology 2021

DOI: 10.1016/b978-0-12-820255-5.00007-6

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Materials science issues related to the fabrication of highly doped junctions by laser annealing of Group IV semiconductors

Ray Duffy

E. Napolitani

Fuccio Cristiano³

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Cited by 2 publications

References 260 publications

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Charge transport in n-type As- and Sb-hyperdoped Ge

Wang,

Shaikh,

et al. 2024

Applied Physics Letters

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This paper presents a systematic study of the charge transport behavior of heavily doped n-type Ge layers with As and Sb. A nonequilibrium method ion implantation followed by milliseconds flash lamp annealing is applied to synthesize the n++ Ge layers (Ge:As and Ge:Sb). The resulting materials contain free electrons with a density above 3 × 1019 cm−3 and mobility more than 220 cm2/(V s). Quantum corrections to the conductance in a magnetic field are observed at low temperatures. Weak localization persists up to 30 K in Ge:Sb, while only up to 10 K in Ge:As. Using the Hikami–Larkin–Nagaoka model to fit the magnetoconductance data, we obtain the phase coherence length lϕ of the hyperdoped Ge samples in the range of 70–163 nm. This study may pave a way to explore possible applications for quantum technologies utilizing As- and Sb-hyperdoped Ge.

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Charge transport in n-type As- and Sb-hyperdoped Ge

Wang,

Shaikh,

et al. 2024

Applied Physics Letters

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Agata detector technology: recent progress and future developments

et al. 2023

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Abstract$$\gamma $$ γ -ray tracking is based on a new generation of position sensitive high-purity germanium (HPGe) detectors. A novel type of cluster detector was successfully developed and assembled for the high-resolution $$\gamma $$ γ -ray spectrometer Advanced Gamma Tracking Array AGATA. The core part of the detector consists of three encapsulated, 36-fold segmented HPGe detectors which are operated in a common cryostat. The Ge crystal is hermetically sealed inside an aluminium can. All energy channels provide best energy resolution of core and segment signals for an extended energy range well above 50 MeV. A low cross-talk level was determined for the HPGe detectors and its preamplifier circuitry. Related cross-talk corrections are essential for highest energy resolution and improved position dependent pulse shape information. Recently a new encapsulation technology was put into operation which is based on a renewable metal elastic seal. HPGe detector developments are concerned with technologies for the production of p+ and n+ contacts, the segmentation and passivation of encapsulated HPGe crystals. Semiconductor processing research specifically aimed to develop a stable, thin and easy to segment n+ contact. A novel process, based on pulsed laser melting PLM, was successfully employed to produce very thin n+ and p+ contacts preserving the Ge purity. The contacts were segmented using a photolithographic process and then the intrinsic surface between contacts was passivated to assure the electrical insulation between them. A small detector prototype with three segments was made using these new techniques and then successfully tested.

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Materials science issues related to the fabrication of highly doped junctions by laser annealing of Group IV semiconductors

Cited by 2 publications

References 260 publications

Charge transport in n-type As- and Sb-hyperdoped Ge

Charge transport in n-type As- and Sb-hyperdoped Ge

Agata detector technology: recent progress and future developments

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