Charge transport in n-type As- and Sb-hyperdoped Ge
Mao Wang,
M. S. Shaikh,
Yi Li
et al.
Abstract:This paper presents a systematic study of the charge transport behavior of heavily doped n-type Ge layers with As and Sb. A nonequilibrium method ion implantation followed by milliseconds flash lamp annealing is applied to synthesize the n++ Ge layers (Ge:As and Ge:Sb). The resulting materials contain free electrons with a density above 3 × 1019 cm−3 and mobility more than 220 cm2/(V s). Quantum corrections to the conductance in a magnetic field are observed at low temperatures. Weak localization persists up t… Show more
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