Materials Issues and Characterization of Low-k Dielectric Materials

Ryan, E. Todd; McKerrow, Andrew J.; Leu, Jihperng; Ho, Paul S.

doi:10.1007/978-3-642-55908-2_2

Cited by 4 publications

(5 citation statements)

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“…Recent studies on various low relative permittivity materials have demonstrated that most of structural, optical, mechanical, electrical, dielectric, and thermal properties of polymer films are expected to be film thickness dependent [l-71. Hence, the film thickness dependence of the key properties of dielectric films becomes an important IC issue [8,9].…”

Section: Introductionmentioning

confidence: 99%

Thickness dependent dielectric strength of a low-permittivity dielectric film

Kim

Shi

2001

IEEE Trans. Dielect. Electr. Insul.

119

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The dielectric strength of a promising interlevel low relative permittivity dielectric is investigated for various film thicknesses and temperatures by using I-V measurements with metalinsulator-semiconductor (MIS) structures. It is found that the dielectric breakdown mechanism also depends on thickness. For relatively thick films (thickness >500 nm), the dielectric breakdown is electromechanical in origin, i.e. the dielectric strength is proportional to the square root of Young's modulus of the films. By scanning electron microscopy (SEM) observation, a microcrack in thicker films may contribute to a lower value of Young's modulus, which may confirm that the electromechanical breakdown is the dominant mechanism for dielectric breakdown of thicker films. In addition, the thickness dependent dielectric strength can be described by the well-known inverse power-law relation by using different exponents to describe different thickness ranges. However for thinner films, i.e. t500 nm, the experimentally observed relationships among the dielectric strength, Young's modulus, and film thickness cannot be explained by the existing models.

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Section: Introductionmentioning

confidence: 99%

Thickness dependent dielectric strength of a low-permittivity dielectric film

Kim

Shi

2001

IEEE Trans. Dielect. Electr. Insul.

119

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“…The pore and cage sizes were extracted in [8] using the model proposed in [1,2], which is also used to calculate the temperature evolution of the lifetimes of o-Ps trapped in the pores and cages. Changes in the lifetime components due to changes in pore size is unlikely, since the thermal expansion coefficient at room temperature for similar materials (HSSQ) is 20.5 ppm per K [9] or <1% from 300 K to 50 K, amounting to <100 ps change in lifetime. For porosities below 10.4%, the mean lifetime decreases slightly with decreasing temperature.…”

Section: Resultsmentioning

confidence: 99%

Positronium in Low Temperature Mesoporous Thin Films

Fischer

Weber

Lynn

2004

MSF

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The 3 /2 ratio in uncapped, closed porosity mesoporous films (3.5-17.3% porosity) is measured from 50-400 K. For 10.4% porosity or less, the 3 /2 ratio for Ps annihilating inside the sample decreases slightly with decreasing temperature, while it increases for 17.3% porosity. We extract the temperature dependence of the mean lifetime from the 3 /2 ratio and compare to our calculations incorporating a model [1,2] of confined Ps. Estimating a reduction in the diffusion length of positrons/Ps with decreasing temperature, we find reasonable agreement for -10.4% porosity, while our calculations disagree with results for 17.3% porosity.

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“…Hence RC delay can be reduced, other additional benefits include less power consumption and reduced joule heating. The lower resistivity of Cu implies a thinner metal could be used for a fixed resistance per unit length, which reduces sidewall capacitance responsible for crosstalk as the thickness of the adjacent dielectric material is also reduced (since crosstalk is proportional to sidewall capacitance and total capacitance ratio [13])…”

Section: School Ofmechanical and Aerospace Engineeringmentioning

confidence: 99%

“…In addition to its electrical property benefits, Cu is also mechanically reliable owning to its higher stiffness (130 GPa vs 70 GPa) [13][14][15] and is a better heat conductor as…”

Section: School Ofmechanical and Aerospace Engineeringmentioning

confidence: 99%

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Application of carbon nanotubes (CNTS) in copper/low k interconnects design

Loo¹

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The author would like to express his gratitude to his supervisor Asst Prof Sridhar Idapalapati from School of Mechanical and Aerospace Engineering (MAE), NTU, for his comments and suggestions for improvements. In addition, he would also like to thank Asst Prof Lance Li, Asst Prof Zhou Jijie and Assoc Prof Subodh from School of Materials Science and Engineering (MSE) for their suggestions, advice and helpful discussions regarding the applications of Carbon nanotubes (CNTs). He would also like to thank Dr Valery Nosik and Dr Wang Shanzhong, Charles from ST Nanotube Centre for their help in carbon nanotube growth and supervision on the industrial relevance of the project. He also would like to thank Dr Tee Tong Yan and Dr Zhang Xueren for their advice in package development. Last but not least, the author is grateful to all who have rendered their aid to him in one way or another and is truly appreciative of them all.

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Materials Issues and Characterization of Low-k Dielectric Materials

Cited by 4 publications

References 73 publications

Thickness dependent dielectric strength of a low-permittivity dielectric film

Thickness dependent dielectric strength of a low-permittivity dielectric film

Positronium in Low Temperature Mesoporous Thin Films

Application of carbon nanotubes (CNTS) in copper/low k interconnects design

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