2017
DOI: 10.1117/12.2263999
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Materials for microbolometers: vanadium oxide or silicon derivatives

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Cited by 13 publications
(13 citation statements)
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“…From the transient voltage results, a R v of 28.1 VW −1 can be calculated (at 5 Hz). This R v value is low when we compared to other flexible bolometer devices, typical values of >10 3 VW −1 can be found in the literature 29,30,37 . Although our devices possess high light absorption and elevated TCR values, the low R v value is not surprising.…”
Section: Device Characterizationmentioning
confidence: 65%
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“…From the transient voltage results, a R v of 28.1 VW −1 can be calculated (at 5 Hz). This R v value is low when we compared to other flexible bolometer devices, typical values of >10 3 VW −1 can be found in the literature 29,30,37 . Although our devices possess high light absorption and elevated TCR values, the low R v value is not surprising.…”
Section: Device Characterizationmentioning
confidence: 65%
“…1, a high TCR is critical for bolometer operations. Bolometer TCR values typically range between 0.1%°C −1 and 9%°C −1 and depend heavily on the absorber material used 29,30,37 . In the case of the devices presented in this article, the change of resistance originates from the silver interdigital electrodes and the flexible PET substrate.…”
Section: Device Characterizationmentioning
confidence: 99%
“…Generally different materials are used for these layers to increase the performance of the detectors. Vanadium oxide (VO x ) and amorphous silicon (a-Si) are the mostly used active detector materials in microbolometers [2][3][4][5], while silicon nitride (Si 3 N 4 ) is generally used as absorber layer [6,7]. This multi layer structure increases the design and fabrication complexity and dependently increases the cost of the detector.…”
Section: Introductionmentioning
confidence: 99%
“…The IR thermography at ambient finds diverse applications in fields ranging from night vision (2), security surveillance (3), and electronics inspection (4) to medical diagnostics (5), structural defect screening (6), and academic research (7). The noise-equivalent differential temperature (NEDT), one key figure of merit for these cameras, has been improved via better designs to enhance detection and conversion of P rad (8)(9)(10), while assuming the T dependence of P rad to be strictly bounded by the T 4 law. Consequently, the roadmap of NEDT currently saturates at 20 to 40 mK for uncooled bolometers, with little advance in the past decades (1,11).…”
Section: Introductionmentioning
confidence: 99%