Materials for an attenuated phase-shifting mask in 157-nm lithography

Matsuo, Takahiro; Onodera, Toshio; Itani, Toshiro; Morimoto, Hiroaki; Haraguchi, Takashi; Kanayama, Koichiro; Matsuo, Tadashi; Otaki, Masao

doi:10.1117/12.410703

Cited by 5 publications

(1 citation statement)

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“…These include MoSi, CrF, ZrSi, and other materials, and some of these have already been put into practical use.U4) In an earlier study, the authors evaluated the suitability ofZrSi, and SiO for use as materials for F2 lithography, and reported that these material systems do indeed exhibit sufficient optical durability. (5) In this work, we propose a Ta-based and a Cr-base material as a new material for fabricating F2 lithography Att-PSMs. Then, we assess the irradiation durability of Ta-group bilayer films (Ta and TaSiO) and Cr film to F2 laser light, and demonstrate the effectiveness of Ta-based and Cr-based Att-PSMs.…”

Section: Introductionmentioning

confidence: 99%

Investigation of attenuated phase-shifting mask material for 157-nm lithography

Onodera¹,

Matsuo²,

Itani³

et al. 2001

SPIE Proceedings

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This work was done to identify viable materials for attenuated phase-shift masks (Att-PSMs) for use with 157-nm lithography. Earlier studies proposed Si-based and Zr-based materials as potential contenders for use as Att-PSMs for 157-nm lithography. This report proposes new Ta-based materials for Att-PSMs, and evaluates the irradiation durability of Ta-group bilayer films (Ta and TaSiO) and Si film to F2 laser light. The Ta-based mask is a bilayer structure consisting of an absorption film (AF) layer and a transparent film (TF) layer. Ta is used for the AF, while TaSiO is used for the TF. The Crof the Si -based mask is used for the AF layer. The TF layer is etched substrate. The transmittance of the Cr-based mask is readily controlled by the thickness of the Cr layer. The phase angle is controlled by the depth of etching substrate. It was found that the Ta-based bilayer films, and the Cr-based films exhibit good irradiation durability for irradiation to 157-nm light. We demonstrated that the Ta-based and Cr-based Att-PSMs are practical for use in 157-nm lithography.

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Section: Introductionmentioning

confidence: 99%