Materials Characterization of CIGS solar cells on Top of CMOS chips

Abstract

In the current work, we present a detailed study on the material properties of the CIGS layers, fabricated on top of the CMOS chips, and compare the results with the fabrication on standard glass substrates. Almost identical elemental composition on both glass and CMOS chips (within measurement error). From X-ray diffraction measurement, except two peaks from the Si <100> substrate, the diffraction peaks from CIGS solar cell CMOS chip and that on glass substrate coincide for all three temperatures. Helium ion microscope images of the cross-section and top view of the CIGS layers, shows that the grain size is suitable for high efficiency solar cells.

Solar cells on CMOS chips as energy harvesters : integration and CMOS compatibility

“…The grain size of the CIGS is well above half a micrometer, which can be observed by top-view HIM microscopy. Detailed analysis of these is reported elsewhere [198]. These grain sizes depend on the process conditions [199,200].…”