Materials Applications of Aberration-Corrected STEM

Pennycook, Stephen J.; Chisholm, M. F.; Varela, María; Lupini, A. R.; Borisevich, Albina Y.; Peng, Yingquan; Benthem, Klaus van; Shibata, Naoya; Dravid, V. P.; Prabhumirashi, Pradlyumma; Findlay, Scott D.; Oxley, Mark P.; Allen, L. J.; Dellby, Niklas; Nellist, Peter D.; Szilágyi, Zoltán; Krivanek, Ondrej L.

doi:10.1017/s1431927604555678

Cited by 7 publications

(5 citation statements)

References 2 publications

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“…However, the residual aberrations still provide an important limit to the resolutioñ Hartel et al, 2004!. In this article we consider some initial results from the FEI Titan equipped with two different hexapole correctors: first, a conventional CEOS corrector "CESCOR," later replaced with an improved corrector "DCOR" designed to reduce the residual aberrations and a prototype high-brightness gun. Reviews of work from other aberration-corrected instruments can be found elsewherẽ Rose, 2003;Varela et al, 2005;Lentzen, 2006;Lupini et al, 2007;Pennycook et al, 2008;Smith, 2008!. Here we give a brief description of the instrument, characterize the resolu-tion in first two and then three dimensions, and finally examine single atom detection with some three-dimensional 3D!…”

Section: Introductionmentioning

confidence: 96%

“…and in particular detail by Rose~1981, 1990, 2003!. Reviews of work from other aberration-corrected instruments can be found elsewherẽ Rose, 2003;Varela et al, 2005;Lentzen, 2006;Lupini et al, 2007;Pennycook et al, 2008;Smith, 2008!. However, any long multipole system will have higher order effects due to the propagation of the electrons along the axis.…”

Section: Introductionmentioning

confidence: 99%

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Characterizing the Two- and Three-Dimensional Resolution of an Improved Aberration-Corrected STEM

et al. 2009

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The successful development of third-order aberration correctors in transmission electron microscopy has seen aberration-corrected electron microscopes evolve from specialist projects, custom built at a small number of sites to common instruments in many modern laboratories. Here we describe some initial results illustrating the two- and three-dimensional (3D) performance of an aberration-corrected scanning transmission electron microscope with a prototype improved aberration corrector designed to also minimize fifth-order aberrations and a new, higher brightness gun. We show that atomic columns separated by 0.63 A can be resolved and demonstrate detection of single dopant atoms with 3D sensitivity.

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Section: Introductionmentioning

confidence: 96%

Section: Introductionmentioning

confidence: 99%

Characterizing the Two- and Three-Dimensional Resolution of an Improved Aberration-Corrected STEM

et al. 2009

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“…Many of the results presented here have been previously published, and the original papers should be consulted for more details and additional references. Some of the material has also appeared in other review articles (Varela et al 2005;Chisholm & Pennycook 2006;Pennycook et al 2006Pennycook et al , 2007Pennycook et al , 2008aLupini et al 2007).…”

Section: Introductionmentioning

confidence: 94%

“…Some of the material has also appeared in other review articles (Varela et al 2005;Chisholm & Pennycook 2006;Pennycook et al 2006Pennycook et al , 2007Pennycook et al , 2008aLupini et al 2007). Figure 1a shows the first direct image of a crystal lattice demonstrating subangstrom resolution, Si 1 1 2 , obtained on the Oak Ridge National Laboratory (ORNL) VG Microscopes HB603U STEM.…”

Section: Introductionmentioning

confidence: 99%

Aberration-corrected scanning transmission electron microscopy: from atomic imaging and analysis to solving energy problems

Pennycook

Chisholm

Lupini

et al. 2009

Phil. Trans. R. Soc. A.

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The new possibilities of aberration-corrected scanning transmission electron microscopy (STEM) extend far beyond the factor of 2 or more in lateral resolution that was the original motivation. The smaller probe also gives enhanced single atom sensitivity, both for imaging and for spectroscopy, enabling light elements to be detected in a Z-contrast image and giving much improved phase contrast imaging using the bright field detector with pixel-by-pixel correlation with the Z-contrast image. Furthermore, the increased probe-forming aperture brings significant depth sensitivity and the possibility of optical sectioning to extract information in three dimensions. This paper reviews these recent advances with reference to several applications of relevance to energy, the origin of the low-temperature catalytic activity of nanophase Au, the nucleation and growth of semiconducting nanowires, and the origin of the eight orders of magnitude increased ionic conductivity in oxide superlattices. Possible future directions of aberration-corrected STEM for solving energy problems are outlined.

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“…Two applications are covered in detail, first, determination of the 3D distribution of stray Hf atoms in the gate region of a Si/SiO 2 /HfO 2 high dielectric constant (high-K) device structure [15][16][17], and second, the imaging of gold atoms inside a Si nanowire occupying substitutional and interstitial sites [18]. We assume some familiarity with STEM imaging; for more details the reader is referred to recent review papers [19][20][21][22][23][24].…”

Section: Introductionmentioning

confidence: 99%

Seeing inside materials by aberration-corrected electron microscopy

Pennycook

Benthem

Marinopoulos

et al. 2011

IJNT

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The recent successful correction of lens aberrations in the electron microscope has improved resolution by more than a factor of two in just a few years, bringing many benefits for the study of materials. These benefits extend significantly beyond enhanced resolution alone. Aberration correction gives higher resolution by allowing the objective lens to have a wider aperture, which also results in a reduced depth of field. This effect can be used to only focus specific sections inside materials for the first time. In this contribution we describe recent results exploiting this capability. Additionally, we show how combining the microscopy data with first-principles theory gives new insights into materials properties. We cover two applications, both involving heavy atoms in a lighter host. The first shows how single Hf atoms can be mapped in three dimensions inside the 1 nm-wide SiO 2 region of a high dielectric constant device structure, and how a link to macroscopic device properties results through theoretical calculations. The second example is from the field of nanoscience, where individual Au atoms are imaged inside Si nanowires grown by a vapour-liquid-solid mechanism. The majority of Au atoms are probably injected by the highly energetic electron beam. However, their observed sites and atomic configurations represent at least meta-stable configurations and match well to results from density functional calculations.

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Materials Applications of Aberration-Corrected STEM

Abstract: Extended abstract of a paper presented at the Pre-Meeting Congress: Materials Research in an Aberration-Free Environment, at Microscopy and Microanalysis 2004 in Savannah, Georgia, USA, July 31 and August 1, 2004.

Cited by 7 publications

References 2 publications

Characterizing the Two- and Three-Dimensional Resolution of an Improved Aberration-Corrected STEM

Characterizing the Two- and Three-Dimensional Resolution of an Improved Aberration-Corrected STEM

Aberration-corrected scanning transmission electron microscopy: from atomic imaging and analysis to solving energy problems

Seeing inside materials by aberration-corrected electron microscopy

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