Material removal in grinding sapphire wafers with brazed–diamond pellet plates

Fang, Congfu; Zhang, Yan; Deng, Wenwen; Zhang, Liangchi

doi:10.1080/10426914.2019.1594260

Cited by 8 publications

(1 citation statement)

References 33 publications

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“…Sapphire is a type of single crystal widely used in modern industries, for example, working as panels in mobile phones and watches, 1,2 as optical windows in various military optical sensors, 3,4 due to its excellent properties of high hardness, ultrahigh melting point, and peculiar light transmission. 1,5 In these applications, sapphire is generally subjected to contact or collision loads, and thus, it inevitably suffers from the destruction of being scratched and marked as well as mechanical failure by fracture. 6 Although some strengthening technologies have been developed for materials such as ceramics and metals, they are not applicable to sapphire.…”

Section: Introductionmentioning

confidence: 99%

Enhancing the fracture toughness and hardness of sapphire by high‐temperature rolling

Chen,

Liu,

2023

J Am Ceram Soc.

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Although the hardness of sapphire is very high, in some applications, for example, working as panels in mobile phones and watches as well as optical windows in various military optical sensors, it still suffers from the destruction of being scratched and marked as well as mechanical failure by fracture. Here we reported that the technique of high‐temperature rolling we developed recently could be exploited to sapphire to enhance its hardness and fracture toughness. After rolling at 1200°C, Vickers’ hardness and fracture toughness of sapphire increase by 4%–6% and 13%–27%, respectively. The enhancement of fracture toughness was explained by the residual compressive stress layer that was introduced in sapphire during rolling. The improvement of hardness was thought to be related to the hardening effect of dislocations. This work provides a new strategy for the mechanical property enhancement of sapphire in further applications.

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Section: Introductionmentioning

confidence: 99%

Enhancing the fracture toughness and hardness of sapphire by high‐temperature rolling

Chen,

Liu,

2023

J Am Ceram Soc.

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Material removal rate of double-faced mechanical polishing of 4H-SiC substrate

Zhang

Yang

Qiu

2021

Int J Adv Manuf Technol

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Silicon carbide (SiC) has been a promising the-third-generation semiconductor power device material for high-power, high-temperature, substrate applications. It aims to improve the material removal rate (MRR), on the premise of ensuring the surface roughness requirements of the double-faced mechanical polishing of 6-inch SiC substrate. To obtain the relationship between any point on SiC substrate and polishing pads, the model about double-faced mechanical polishing has been built and the kinematics equations were created. Best optimized material removal rate parameters were obtained. MRR reached the maximum when speed rate of the outside ring gear to the inside sun gear m=-1, speed rate of lower plate to the inside sun gear n=5, SiC substrate distribution radius RB=75. The primary and secondary order of MRR (n>m>RB) was obtained. An accurate mathematical model of orthogonal rotary regression test of Tri-factor quadratic of MRR was established and the regression model was significant. Surface quality of SiC substrate was observed and characterized with SEM and AFM. It greatly provides a key guarantee for the next process of CMP, confirmed the importance of MRR to ultra-smooth polishing, and provides a guarantee for its application in semiconductor equipment and technology.

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