Material Parameters for Analytical and Numerical Modeling of Si and Strained SiGe Heterostructure Devices

Abstract

We present calculated values of effective masses, bandgap reduction, and Fermi energy of p-doped Si and strained p-doped SiGe layers. The calculations have been made for Ge concentrations in the range 0 to 30% and boron concentration in the range 10 18 cm -3 to 3×10 20 cm -3 . Empirical expressions for the effective masses are given. These expressions and calculated values of the other parameters are convenient for use in computer codes for modeling device processing and performance. To validate the calculated values, we have compared them with the available experimental results. Good agreement between the calculated and the experimental values is found.

Effect of heavy boron doping on the electrical characteristics of SiGe HBTs

“…In figure 2, absolute agreement with experiment is not very good; one reason is possibly related to the selection of compensation ratio z. A large range of z from 5 to 11 is obtained [13,14,19], but which one is accurate is undetermined yet. Here, we select the one we obtained where z = 7.3; maybe a better z will be found later to fit reality better.…”

SiGe HBTs for application in BiCMOS technology: I. Stability, reliability and material parameters

“…the singlecrystal emitter) beyond which the dipoles are formed. Our recent calculations [46] show that when kinetic effects are included in the theory, only singles should be formed in the SiGe layers with the emitter thicknesses studied in [6,16].…”