2020
DOI: 10.1021/acsomega.0c00485
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Material Microsurgery: Selective Synthesis of Materials via High-Temperature Chemistry for Microrecycling of Electronic Waste

Abstract: This study aims to establish a novel pathway for transforming complex electronic waste into advanced hybrid materials by leveraging high-temperature reactions. This research utilized silica (SiO 2 ) sourced from computer monitor glass; carbon obtained from plastic components of spent monitor shells; and copper (Cu) recovered from waste printed circuit boards (PCBs) to produce a high-quality hybrid layer on a steel substrate. The transformation process consisted of two steps. In the first… Show more

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Cited by 5 publications
(3 citation statements)
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“…Here, a low intense peak was observed around 852.58 and 852.12 eV of Pt 0.5 Ni 1 @HT‐GF and Pt 1 Ni 1 @HT‐GF , respectively, which is attributed to metallic nickel phase (Ni 0 ). [ 25 ] The Ni 2p 3/2 high intense peak observed at 854.33, 855.48, and 856.30 eV represented the Ni 2+ intercalated with Pt metal and Ni 2+ ‐O x , respectively. Likewise, Ni 2p 1/2 peaks were observed at 872.84 and 873.24 eV, which can mention the Ni 2+ ‐Pt interaction and Ni 2+ ‐O x , respectively.…”
Section: Resultsmentioning
confidence: 99%
“…Here, a low intense peak was observed around 852.58 and 852.12 eV of Pt 0.5 Ni 1 @HT‐GF and Pt 1 Ni 1 @HT‐GF , respectively, which is attributed to metallic nickel phase (Ni 0 ). [ 25 ] The Ni 2p 3/2 high intense peak observed at 854.33, 855.48, and 856.30 eV represented the Ni 2+ intercalated with Pt metal and Ni 2+ ‐O x , respectively. Likewise, Ni 2p 1/2 peaks were observed at 872.84 and 873.24 eV, which can mention the Ni 2+ ‐Pt interaction and Ni 2+ ‐O x , respectively.…”
Section: Resultsmentioning
confidence: 99%
“…Chen et al used Ni as a catalyst to prepare SiC@SiO 2 NWs with high color purity of violet light . The utilization of metal catalysts (such as Co, Ni, Fe, and Cr) may have adverse effects on the purity and application potential of the synthesized materials in various fields. , In a typical preparation of SiC@SiO 2 NWs, C and Si sources are commonly mixed homogeneously and subjected to high temperatures, which leads to destruction of the SiO 2 layer during the subsequent purification process and affects the physical/chemical properties. , …”
Section: Introductionmentioning
confidence: 99%
“…18,19 In a typical preparation of SiC@SiO 2 NWs, C and Si sources are commonly mixed homogeneously and subjected to high temperatures, which leads to destruction of the SiO 2 layer during the subsequent purification process and affects the physical/chemical properties. 20,21 In addition, SiC@SiO 2 NWs can be prepared using SiC as a substrate. 18 For example, Qu et al prepared SiC@SiO 2 NWs by oxidizing SiC NWs in air at high temperatures (900−1200 °C) and found that SiC@SiO 2 NWs showed better thermal insulation properties than SiC NWs.…”
Section: ■ Introductionmentioning
confidence: 99%