Material Design of New p-Type Tin Oxyselenide Semiconductor through Valence Band Engineering and Its Device Application

Kim, Taikyu; Yoo, Baekeun; Youn, Yong; Lee, Miso; Song, Aeran; Chung, Kwun‐Bum; Han, Seungwu; Jeong, Jae Kyeong

doi:10.1021/acsami.9b12186

Cited by 18 publications

(17 citation statements)

References 38 publications

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“…(ii) Mixed oxides: In 2 O 3 -Ag 2 O [41,42]; (iii) Chromium based oxides: LaCrO 3 [43], Cr 2 O 3 [44,45]; (iv) Ag-, Cu-, Pd-and Pt-based delafossites [46][47][48][49][50][51][52][53][54][55][56]; (v) Layered oxychalcogenides: LaCuOS [57][58][59] and LaCuOSe [60]; (vi) Spinel oxides: NiCo 2 O 4 [61,62], ZnCo 2 O 4 [63,64], ZnIr 2 O 4 [63] and ZnRh 2 O 4 [65,66], etc. ; (vii) Others: SnSeO [67], Ba 2 BiTaO 6 [68], SrCu 2 O 2 [69][70][71], [Cu 2 S 2 ][Sr 3 Sc 2 O 5 ] [72] or La 2/3 Sr 1/ 3 VO 3 [73].…”

Section: Graphical Abstract Introductionmentioning

confidence: 99%

A review on the p-type transparent Cu–Cr–O delafossite materials

et al. 2022

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Transparent conductive oxides (TCOs) constitute a class of materials that combine high electrical conductivity and optical transparency. These features led to the development of the transparent electronics applications, such as flat panel displays, “smart” windows or functional glasses. N-type TCOs dominate the applications market, and the lack of a suitable p-type counterpart limits the fabrication of a completely transparent active device, which might be considered as a technological breakthrough. Among the wide range of p-type candidates, delafossite CuCrO2 (and its out-of-stoichiometry derivatives) is a promising material to achieve the desired p-type TCO properties as, up to date, it is presenting the foremost trade-off between optical and electrical properties. The present paper covers the research work and the major achievements related to copper chromium delafossite. A comprehensive overview of fabrication methods and opto-electronic properties is presented. The source of doping and the charge carriers transport mechanism are also thoroughly discussed. Graphical abstract

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Section: Graphical Abstract Introductionmentioning

confidence: 99%

A review on the p-type transparent Cu–Cr–O delafossite materials

et al. 2022

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Section: Progress Of P‐channel Oxide Thin‐film Transistorsmentioning

confidence: 99%

“…Since this report, the fabrication process involving the low-temperature deposition and subsequent PDA using various deposition methods such as evaporation, sputtering, ALD, and so on have been extensively utilized due to its convenience and broad compatibility with the transistor fabrication techniques. [40][41][42][43][44][45][46][47][48][49][50][51][52][53][54][55][56][57][58] Early research of SnO focused primarily on characteristic enhancement through optimization of the fabrication process.…”

Section: Approaches To Improve Device Performancesmentioning

confidence: 99%

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Recent Progress and Perspectives of Field‐Effect Transistors Based on p‐Type Oxide Semiconductors

Kim

Jeong

2021

Physica Rapid Research Ltrs

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Oxide semiconductors are considered as one of the most promising candidates for back‐end‐of‐line transistors for monolithic 3D integration due to various advantages, such as complementary metal–oxide–semiconductor (CMOS)‐compatible method, low fabrication temperature, and promising electrical characteristics. As such, the demand for p‐type oxide semiconductors that are comparable to their n‐type oxide counterparts is increasing. However, the inferior electrical characteristics of p‐channel field‐effect transistors based on oxide semiconductors hinder their widespread application. Thus, the development of high‐performance p‐type oxide semiconductors is essential for their implementation in next‐generation electronics, which have requirements such as innovative form factors, high power efficiencies, and superior transparency. Herein, strategies for improving the device performances of p‐type oxide semiconductors fabricated via CMOS‐compatible methods are reviewed from a material science and device physics perspective, and a brief history of p‐type oxide semiconductors is discussed. Furthermore, critical issues for p‐type oxide semiconductors, such as the transport mechanism, bias stress stability, high off‐current, and ambipolar behavior, are discussed.

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“…Tin oxyselenide (SnOSe) thin films with p-type conductivity have recently been reported in the experimental literature. 120 Thin films were prepared by reactive co-sputtering from Sn and SnSe targets under oxygen atmosphere (substrate temperature not reported). After deposition, the films were annealed at 300°C under vacuum.…”

Section: Ternary Oxy-chalcogenidesmentioning

confidence: 99%

Bridging the p-type transparent conductive materials gap: synthesis approaches for disperse valence band materials

Fioretti

Morales‐Masis

2020

J. Photon. Energy

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Transparent conductive materials (TCMs) with high p-type conductivity and broadband transparency have remained elusive for years. Despite decades of research, no p-type material has yet been found to match the performance of n-type TCMs. If developed, the high-performance p-type TCMs would lead to significant advances in a wide range of technologies, including thin-film transistors, transparent electronics, flat screen displays, and photovoltaics. Recent insights from high-throughput computational screening have defined design principles for identifying candidate materials with low hole effective mass, also known as disperse valence band materials. Particularly, materials with mixed-anion chemistry and nonoxide materials have received attention as being promising next-generation p-type TCMs. However, experimental demonstrations of these compounds are scarce compared to the computational output. One reason for this gap is the experimental difficulty of safely and controllably sourcing elements, such as sulfur, phosphorous, and iodine for depositing these materials in thin-film form. Another important obstacle to experimental realization is air stability or stability with respect to formation of the competing oxide phases. We summarize experimental demonstrations of disperse valence band materials, including synthesis strategies and common experimental challenges. We end by outlining recommendations for synthesizing p-type TCMs still absent from the literature and highlight remaining experimental barriers to be overcome.

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Material Design of New p-Type Tin Oxyselenide Semiconductor through Valence Band Engineering and Its Device Application

Cited by 18 publications

References 38 publications

A review on the p-type transparent Cu–Cr–O delafossite materials

A review on the p-type transparent Cu–Cr–O delafossite materials

Recent Progress and Perspectives of Field‐Effect Transistors Based on p‐Type Oxide Semiconductors

Bridging the p-type transparent conductive materials gap: synthesis approaches for disperse valence band materials

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