2009
DOI: 10.1149/1.3122095
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Material Dependence of Negative Bias Temperature Instability (NBTI) Stress and Recovery in SiON p-MOSFETs

Abstract: Negative Bias Temperature Instability (NBTI) is studied in Silicon Oxynitride (SiON) p-MOSFETs using a recently developed UltraFast On-The-Fly linear drain current (UF-OTF I DLIN ) method. It is shown that both stress and recovery phases of NBTI are strongly influenced by SiON gate insulator process. Gate insulator nitrogen (N) spatial distribution is shown to impact interface trap generation (∆N IT ) and hole trapping (∆N h ) components of overall threshold voltage shift (∆V T ). A simple, self consistent met… Show more

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