2008 8th IEEE Conference on Nanotechnology 2008
DOI: 10.1109/nano.2008.58
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Mass Production of Room Temperature Single Electron Transistors using Step & Flash Imprint Lithography and Lift-Off Technique

Abstract: We report the use of Step & Flash Imprint Lithography reverse tone (SFIL-R TM ) and liftoff technique to fabricate sub-100nm metal nano-wires as the electrodes for Room Temperature Single Electron Transistors (RT-SET). The optimized process flow was performed on approximately 300 imprints, for a total of 714,000 devices. Each imprinted device contains Drain/Source/Gate electrodes. Multiple electrode geometries were designed to explore the impact of device parameters. Following electrode formation, Tungsten qua… Show more

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Cited by 3 publications
(3 citation statements)
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“…Notably, no intentional design of the QD sites and sizes was employed in our experiment. According to previous studies [30][31][32][33][34][35], there are two main approaches to devise two types of high-performance Si QD transistors: one is Si QD transistors based on epitaxially grown Si QDs [30][31][32], and the other is lithographically fabricated Si QD transistors [30][31][32]. Although the former could allow for the operation of the fabricated devices at elevated temperatures, the method is inappropriate for practical applications because of difficulties in both size and site controls.…”
Section: Resultsmentioning
confidence: 99%
“…Notably, no intentional design of the QD sites and sizes was employed in our experiment. According to previous studies [30][31][32][33][34][35], there are two main approaches to devise two types of high-performance Si QD transistors: one is Si QD transistors based on epitaxially grown Si QDs [30][31][32], and the other is lithographically fabricated Si QD transistors [30][31][32]. Although the former could allow for the operation of the fabricated devices at elevated temperatures, the method is inappropriate for practical applications because of difficulties in both size and site controls.…”
Section: Resultsmentioning
confidence: 99%
“…However, these early devices only operated at liquid helium temperatures, and it has only been more recently that devices capable of room temperature operation have been fabricated [2,[14][15][16]. New designs for SETs that will work at room temperature and can be built at scale is an area of active research [16,17].…”
Section: New Transistor Designs Use Tunneling To Their Advantagementioning
confidence: 99%
“…Some groups have used thiolated gold nanoparticles for the nanoislands [18]. Dr. Bergstrom's group has used a focused ion beam (FIB) to deposit a disordered film of metallic nanoparticles [17]. Dr. Yap's group has taken a different approach using pulsed laser deposition to deposit metallic nanoparticles onto an insulating boron nitride nanotube [2].…”
Section: Randomly Created Devices With Randomized Propertiesmentioning
confidence: 99%